Abstract
Pure and Sb-doped SnTe single crystals are grown by chemical vapour transport (CVT) technique. Doping of 5%, 10%, and 15% Sb is done in SnTe. The grown crystals are perfect stoichiometric and SnTe phase with cubic unit cell structure. The surface study showed growth to happen by lateral layer spread. The electron diffraction supported the crystal structure. The dc electrical resistivity and Seebeck coefficient variation with temperature of the crystals showed them to be metallic in nature having p-type conductivity. The power factor increases with temperature as well as with Sb doping concentration. The thermal study of the grown crystals showed stability of SnTe upto nearly 800 K, while thermal stability decreases by Sb doping. The kinetic parameters which is determined by Kissinger relation supports thermal observations.
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One of the authors, RMK is thankful to the Education Department, Government of Gujarat, India for providing Research Fellowship under SHODH (Scheme of Developing High Quality Research, Grant No. 202001640010) to carry out the research work.
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RMK participated in the material preparation, data collection, analysis, and writing of the original draft. SHC acquired resources and assisted in project administration, writing, reviewing, and editing of the manuscript, and supervision. AJK participated in the conceptualization, investigation, data analysis, and methodology. ABH participated in the material preparation, data collection, and analysis. ZRP participated in the material preparation, data collection, and methodology. RKG participated in the conceptualization, investigation, analysis, and reviewing of the manuscript. SP participated in the investigation, and data analysis. MPD acquired resources and assisted in project administration.
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Kannaujiya, R.M., Chaki, S.H., Khimani, A.J. et al. Effect of Sb doping on CVT grown SnTe single crystals electrical and thermal properties. J Mater Sci: Mater Electron 33, 20823–20836 (2022). https://doi.org/10.1007/s10854-022-08891-6
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DOI: https://doi.org/10.1007/s10854-022-08891-6