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Electrical characteristics of lead-free Mn-doped BiFeO3–SrTiO3 thin films deposited on silicon substrate using pulsed laser deposition

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Abstract

Lead-free 0.4(BiFe0.995Mn0.005O3)–0.6(SrTiO3) thin films were deposited on boron-doped silicon (p-Si) through pulsed laser deposition. The effect of different deposition pressures ranging from 4.66 × 10− 5 to 13.33 Pa was evaluated, with a corresponding deposition temperature of 700 °C. A conventional lithography process was used to define vertical metal–insulator–metal structures, and the electrical characteristics of these structures were evaluated. The results revealed that as the densification is improved, the leakage current is enhanced and the dielectric constant decreased with the decrease in thickness and increase in deposition pressure. The curve of the current density as a function of the applied electric field exhibited a rectifying effect, with a difference of nearly two orders of magnitude in the current with a forward bias compared to that with a reverse bias. The leakage current mechanisms in metal–ferroelectric–semiconductor structures were investigated as well. The main electrode-limited conduction mechanisms were Schottky emission and Fowler–Nordheim tunneling; the bulk-limited mechanisms were ohmic conduction under low applied electric fields and space charge-limited conduction (SCLC) under high electric fields. The SCLC model was used to calculate the total trap-state density (Nt) at room temperature; Nt was higher in the films deposited under higher pressures.

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Acknowledgements

This work was supported by Projects CB 240460 and LN2021-315906 of CONACYT and Prodep 2018-Cinvestav-CA-17. The authors are grateful for the research support received from the National Laboratory, LIDTRA. J. J. Serralta Macías is grateful to CONACYT for the financial support received through the mixed scholarship program. This study received research support from the University of Texas at Dallas (UTD). The authors also wish to thank the laboratory technicians Rivelino Flores Farias and Martín Adelaido Hernández Landaverde for their support.

Funding

Partial financial support was received from Projects CB 240460 and LN2021-315906 of CONACYT, and Prodep 2018-Cinvestav-CA-17.

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Authors and Affiliations

  1. Centro de Investigación y de Estudios Avanzados del I.P.N. Unidad Querétaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, Querétaro, Qro, C.P. 76230, Mexico

    J. J. Serralta-Macías, D. Olguín & J. M. Yáñez-Limón

  2. The University of Texas at Dallas, 800 W Campbell Rd, Richardson, TX, 75080, USA

    R. A. Rodriguez-Davila, M. Quevedo-Lopez & C. D. Young

  3. Departamento de investigación en Física, Universidad de Sonora, Blvd. Luis Encinas y Rosales S/N, Hermosillo, Sonora, 83000, México

    R. A. Rodriguez-Davila & S. J. Castillo

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  1. J. J. Serralta-Macías
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  3. M. Quevedo-Lopez
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Contributions

Conceptualization: [JMY-L, JS-M, MQ, and DO]; Methodology: [JS-M, RR-D, MY-L, MQ, CDY, and SJC]; Formal analysis and investigation: [JS, MY, RR, SJC, and CDY]; Writing and original draft preparation: [JS-M, RR-D, MY-L, DO, and MQ]; Writing and review and editing of the manuscript: [JS-M, RR-D, MY-L, and DO]; Funding acquisition: [JMY-L and JS-M]; Resources: [JM-Y-l, MQ, and CDY]; Supervision: [MY-L, MQ, and DO]. All the authors have read and approved the final manuscript.

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Correspondence to J. M. Yáñez-Limón.

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Serralta-Macías, J.J., Rodriguez-Davila, R.A., Quevedo-Lopez, M. et al. Electrical characteristics of lead-free Mn-doped BiFeO3–SrTiO3 thin films deposited on silicon substrate using pulsed laser deposition. J Mater Sci: Mater Electron 33, 19272–19283 (2022). https://doi.org/10.1007/s10854-022-08765-x

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