Abstract
Well-packed pristine CdSe and Indium-doped CdSe (In:CdSe) thin films have been successfully synthesized on a cost-effective stainless steel substrates by simple chemical route and their performance as photoanode in photoelectrochemical (PEC) solar cell was investigated. With the view to enhance the efficiency of solar cell, various preparative parameters were optimized using renowned PEC way. The Pristine CdSe and In:CdSe thin films were characterized for structural, morphological, optical, and photoelectrochemical studies. The structural analysis revealed modest improvement in crystallinity owed to Indium doping. Morphological modulation noticed from cauliflower structure to elliptical-shaped elongated grains, subsequent to insertion of Indium in CdSe lattice. Doped CdSe photoanodes were found to be more hydrophilic in nature than pristine. Both films possess direct transitions with decrease in band gap energies from 2.1 to 1.91 eV, attributable to doping. Improved power conversion efficiency from 0.54 to 0.79% is recorded as an outcome of indium doping.
Similar content being viewed by others
Data availability
Data will be made available on reasonable request.
References
N.M. Shinde, D.P. Dubal, D.S. Dhawale, C.D. Lokhande, J.H. Kim, J.H. Moon, Mater. Res. Bull. 47, 302 (2012). https://doi.org/10.1016/j.materresbull.2011.11.020
C.S. Bagade, V.B. Ghanwat, K.V. Khot, P.N. Bhosale, Mater. Lett. 164, 52 (2016). https://doi.org/10.1016/j.matlet.2015.10.099
V.S. Raut, C.D. Lokhande, V.V. Killedar, J. Mater. Sci. Mater. Electron. 28, 3140 (2017). https://doi.org/10.1007/s10854-016-5902-6
L.N. Maskaeva, V.F. Markov, O.A. Lipina, A.V. Pozdin, I.A. Anokhina, Russ. J. Phys. Chem. 94, 2441 (2020). https://doi.org/10.1134/S0036024420120195
G. Perna, V. Capozzi, A. Minafra, M. Pallara, M. Ambrico, Eur. Phys. J. B 32, 339 (2003). https://doi.org/10.1140/epjb/e2003-00107-6
Q. Dai, E.M. Sabio, W. Wang, J. Tang, Appl. Phys. Lett. 104(18), 183901 (2014). https://doi.org/10.1063/1.4875107
R. Sahebi, M.R. Roknabadi, M. Behdani, Mater. Res. Express. 6, 126453 (2019). https://doi.org/10.1088/2053-1591/ab6c17
A.A. Yadav, J. Alloys Compd. 543, 129 (2012). https://doi.org/10.1016/j.jallcom.2012.07.097
S.K. Shinde, D.P. Dubal, G.S. Ghodake, V.J. Fulari, J. Electroanal. Chem. 727, 179 (2014). https://doi.org/10.1016/j.jelechem.2014.04.005
K.Y. Rajpure, P.A. Anarase, C.D. Lokhande, C.H. Bhosale, Phys. Stat. Sol. (a) 172(2), 415 (1999)
A.A. Yadav, J. Mater. Sci. Mater. Electron. 27, 4508 (2016). https://doi.org/10.1007/s10854-016-4325-8
P.P. Hankare, P.A. Chate, D.J. Sathe, Phys. B 404, 2389 (2009). https://doi.org/10.1016/j.physb.2009.04.048
K.B. Chaudhari, N.M. Gosavi, N.G. Deshpande, S.R. Gosavi, J. Sci.: Adv. Mater. Dev. 1, 476 (2016). https://doi.org/10.1016/j.jsamd.2016.11.001
F. Laatar, A. Harizi, A. Smida, M. Hassen, H. Ezzaouia, Mater. Res. Bull. 78, 83 (2016). https://doi.org/10.1016/j.materresbull.2016.02.021
V. Swaminathan, K.R. Murali, Sol. Energy Mater. Sol. Cells. 63(2), 207 (2000). https://doi.org/10.1016/S0927-0248(00)00010-6
R. Choudhary, R.P. Chavan, J. Mater. Sci. Mater. Electron. 27, 11674 (2016). https://doi.org/10.1007/s10854-016-5303-x
V.S. Raut, C.D. Lokhande, V.V. Killedar, J. Electroanal. Chem. 788, 137–143 (2017). https://doi.org/10.1016/j.jelechem.2017.02.010
G. Hodes, Phys. Chem. Chem. Phys. 9(18), 2181 (2007). https://doi.org/10.1039/B616684A
G.H. Fekadu, A. Tizazu, Int. J. Thin. Fil. Sci. Tec. 8(2), 43 (2019). https://doi.org/10.18576/ijtfst/080203
S.M. Ho, Res. J. Appl. Sci. Eng. Tech. 11(10), 1058 (2015). https://doi.org/10.19026/rjaset.11.2119
V.S. Raut, V.V. Killedar, C.D. Lokhande, Int. J. Eng. Res. Technol. 10(1), 568 (2017)
S.M. Pawar, A.V. Moholkar, K.Y. Rajpure, C.H. Bhosale, J. Phys. Chem. Solids 10(1), 2386 (2006). https://doi.org/10.1016/j.jpcs.2006.06.015
H. Sabri, S. Saleh, A. Zyoud, N.N. Abdel-Rahman, I. Saadeddin, G. Campet, D. Park, M. Faroun, H.S. Hilal, Electrochim. Acta. 136, 138 (2014). https://doi.org/10.1016/j.electacta.2014.05.071
M. Piryaei, E.G. Hatam, N. Ghobadi, J. Mater. Sci. Mater. Electron. 28, 2550 (2017). https://doi.org/10.1007/s10854-016-5830-5
G.S. Shahane, K.M. Garadkar, L.P. Deshmukh, Mater. Chem. Phys. 51, 246 (1997). https://doi.org/10.1016/S0254-0584(97)80313-6
E.C.F. da Silva and D. Strauch, Landolt-Börnstein—Group III Condensed Matter Volume 44E, New Data and Updates for several III–V (including mixed crystals) and II–VI Compounds. DOI: https://doi.org/10.1007/978-3-642-23415-6_77 (Springer-Verlag Berlin Heidelberg 2012) p. 134.
V.M. Dzhagan, M.Y. Valakh, A.E. Raevskaya, A.L. Stroyuk, S.Y. Kuchmiy, D.R.T. Zahn, Nanotechnology 19, 305707 (2008). https://doi.org/10.1088/0957-4484/19/30/305707
S. Das, A. Dutta, S. Banerjee, T.P. Sinha, Mater. Sci. Semicond. Process. 18, 152 (2014). https://doi.org/10.1016/j.mssp.2013.11.023
S. Wageh, Physica E 39, 8 (2007). https://doi.org/10.1016/j.mssp.2013.11.023
C. Kong, S. Sun, J. Zhang, H. Zhao, X. Song, Z. Yang, Cryst. Eng. Comm. 14, 5737 (2012). https://doi.org/10.1039/C2CE25709B
A.A. Yadav, M.A. Barote, T.V. Chavan, E.U. Masumdar, J. Alloys Compd. 509, 916 (2011). https://doi.org/10.1016/j.jallcom.2010.09.130
A.M. Perez Gonalez, I.V. Arreola, REVISTA MEXICANA DE FI´SICA 55, 51 (2009) DESCARGAR ARTÍCULO EN FORMATO PDF
J. Xiao, L. Peng, L. Gao, J. Zhong, Z. Huang, E. Yuan, V. Srinivasapriyan, S.F. Zhou, G. Zhan, RSC Adv. 11, 16600 (2021). https://doi.org/10.1039/d1ra02826j
S.K. Shinde, D.P. Dubal, G.S. Ghodake, V.J. Fulari, RSC Adv. 4, 33184 (2014). https://doi.org/10.1039/C4RA02791D
A. V. Shaikh, R.S. Mane, O. S. Joo, B. N. Pawar, J. K. Lee, S. H. Wan Han, J. Phys Chem solids. 72(10), 1122 (2011). DOI :https://doi.org/10.1016/j.jpcs.2011.06.017
C. Bhattacharya, J. Datta, J Solid State Electrochem 11, 215 (2007). https://doi.org/10.1007/s10008-005-0091-x
P.P. Hankare, P.A. Chate, D.J. Sathe, M.R. Asabe, B.V. Jadhav, J. Alloys Compd. 474(1–2), 347 (2009). https://doi.org/10.1016/j.jallcom.2008.06.081
P.P. Hankare, P.A. Chate, P.A. Chavan, D.J. Sathe, J. Alloys Compd. 461, 623 (2008). https://doi.org/10.1016/j.jallcom.2007.07.071
S.J. Lade, M.D. Uplane, C.D. Lokhande, Mater. Chem. Phys. 68, 36 (2001). https://doi.org/10.1016/S0254-0584(00)00280-7
Acknowledgements
One of the authors (VSR) is grateful to UGC, New Delhi for award of teacher fellowship.
Funding
There are no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Author information
Authors and Affiliations
Contributions
All the authors participated sufficiently in the manuscript's concept, design, analysis, writing, or revision. All authors examined, critically revised the manuscript, and then approved the final manuscript.
Corresponding author
Ethics declarations
Conflict of interest
The authors do not have any competing interests.
Ethical approval
This manuscript is original, has not been published before, and is not currently being considered for publication elsewhere. The paper reflects the authors’ own research and analysis in a truthful and complete manner.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Raut, V.S., Lokhande, C.D., Shelke, H.D. et al. Studies on modulated physical and photoelectrochemical properties of CdSe thin films by means of Indium doping. J Mater Sci: Mater Electron 33, 13782–13791 (2022). https://doi.org/10.1007/s10854-022-08310-w
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-022-08310-w