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A facile interface engineering method to improve the performance of FTO/ZnO/CsPbI3−xBrx (x < 1)/C solar cells

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Abstract

Hole-transport-layer (HTL)-free, carbon-based all-inorganic perovskite solar cells (PSCs) are attracting a great interest owing to a low cost and an advanced stability in ambient environment. However, the photoelectric conversion efficiency (PCE) for this kind of PSCs was far lower than expected. Interface engineering is a promising method to enhance PSCs efficiency through improving the interface charge transfer. In our work, we introduce a simple, clean interfacial engineering method of deionized water (DI) spin-coating to treat the F-doped SnO2 (FTO). And then ZnO was spin-coated on the treated FTO. A compact and highly uniform ZnO film was obtained. Excess CsBr was added into CsPbI3 precursor solution to obtain stable black phase CsPbI3 at a low temperature (120 °C). HTL-free, carbon-based all-inorganic CsPbI3−xBrx (x < 1) perovskite solar cells are fabricated with the structure of FTO/DI/ZnO/CsPbI3−xBrx (x < 1)/C. After DI treatment, the defect density of device is greatly decreased so that carriers transport at the interface is accelerated and the charge recombination is effectively suppressed. The champion PCE has been improved from 10.95 to 12.39%, obtaining an improved PCE about 13%, which is the highest PCE for HTL-free, carbon-based all-inorganic PSCs until now.

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Acknowledgements

This work was supported by Scientific Research Fund of Hunan Provincial Education Department (Contract No. 20B030), Foundation of Hunan Educational Committee (Grant No. 18A149).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Changsha University of Science and Technology, Changsha, 410114, People’s Republic of China

    Hao Fu, Junsen Zhang, Yanhao Li, Li Gong & Jincheng Fan

  2. School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    Haiping He & Zhishan Fang

  3. Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, People’s Republic of China

    Conghua Zhou

  4. School of Energy & Power Engineering, Changsha University of Science and Technology, Changsha, 410114, People’s Republic of China

    Jianlin Chen

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  1. Hao Fu
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Contributions

HF: designing experimental scheme, doing experiments, and writing—original draft. JZ: XRD and SEM measurements, and writing—review and editing. YL: doing experiments. LG: advisor, funding acquisition, resources, and writing—review and editing. HH: PL and TRPL measurements. ZF: PL and TRPL measurements. CZ: TPC and TPV measurements. JC: J–V curve measurements. JF: EIS measurements.

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Correspondence to Li Gong.

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Fu, H., Zhang, J., Li, Y. et al. A facile interface engineering method to improve the performance of FTO/ZnO/CsPbI3−xBrx (x < 1)/C solar cells. J Mater Sci: Mater Electron 33, 3711–3725 (2022). https://doi.org/10.1007/s10854-021-07563-1

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