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Investigations on BaMnxTi1-xO3 ferroelectric film based MFS structure for non-volatile memory application

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Abstract

BaMnxTi1-xO3 thin film on a silicon substrate has been prepared through the sol–gel spin coating process. The ferroelectric BaMnxTi1-xO3 film shows the predominant perovskite ABO3 structure for x = 0.2 and 0.3 for the annealing temperature of 650 °C under nitrogen ambient. The metal contact on top and silicon substrate at the bottom of the film forms a Metal-Ferroelectric-Semiconductor capacitor structure. In BaMnxTi1-xO3, the deposited film changes its structural and electrical properties as the concentration value of ‘x’ is changed. The crystal structure of the deposited film has been analysed by XRD. FESEM, EDS and XPS characterization of the film were carried out to discuss the change in the film structure with the change in the value of ‘x’. The Capacitor vs. Voltage (C–V), Current vs. Voltage (I–V), Charge vs. Voltage (Q–V), Endurance, PUND (Positive Up Negative Down) and dielectric study of the films are discussed. Memory window of 8.6 V and leakage current of few nA are obtained. The deposited ferroelectric film shows an endurance of ~ 1011 iteration cycle for the PUND pulse. The optimized doping molar concentration ‘x’ in BaMnxTi1-xO3 shows favourable results for ferroelectric non-volatile memory application with a low cost fabrication method.

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Acknowledgements

This work is supported by Design Innovation Center (DIC) SPOKE, IIIT Allahabad, Prayagraj. The XRD results of the films were obtained from Spintronic Lab, Applied Science Department, IIIT Allahabad. The AFM and XPS results of the film were done at Institute Information Centre (IIC) at IIT-Roorkee. The SEM and EDS analysis of the film were analysed at MSE department at IIT-Kanpur.

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  1. Department of Electronics and Communication, Indian Institute of Information Technology, Allahabad, Prayagraj, Uttar Pradesh, India

    Ajit Debnath, Suraj Lalwani, Sanjai Singh &  Sunny

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  1. Ajit Debnath
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AD and S had concived and designed the experiment. The data collection and critical revison was contributed by AD, SL and SS.

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Correspondence to Sunny.

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Debnath, A., Lalwani, S., Singh, S. et al. Investigations on BaMnxTi1-xO3 ferroelectric film based MFS structure for non-volatile memory application. J Mater Sci: Mater Electron 33, 985–999 (2022). https://doi.org/10.1007/s10854-021-07369-1

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