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Optical, dielectric, laser damage threshold, dielectric and chemical etching properties of Co2+-doped sodium acid phthalate hemihydrate single crystal

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Abstract

The single crystals of pure and 1 mol% Co2+-doped sodium acid phthalate hemihydrate were grown by slow evaporation solution growth technique at room temperature (35 °C). Powder XRD analysis shows that the basic structure of the sodium acid phthalate hemihydrate crystal is unaltered due to Co2+ doping. The functional groups of the crystal were elucidated by Fourier transform infrared (FTIR) spectrum. The transmittance spectra show that the crystals have high transmittance in the entire visible–NIR region. Thermogravimetric curves show the decomposition temperatures as 118 °C and 124 °C for pure and doped crystals. Addition of metal ion increases the hardness of sodium acid phthalate hemihydrate crystal. The dielectric constant value of 1 mol% Co2+-doped crystal was found to be significantly less than that of pure crystal. Multiple-shot damage threshold was performed on (0 0 1) plane. NLO efficiency is increased as a result of metal Co2+ ion doping. The oval shaped etch pits are observed on both pure and doped crystals.

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Authors and Affiliations

  1. Department of Physics, Government Arts and Science College, Hosur, 635110, Tamilnadu, India

    Senthilkumar Chandran

  2. Department of Physics, Government Arts College, Tiruchirappalli, 620022, Tamilnadu, India

    G. John James

  3. Department of Physics, SSN College of Engineering, Chennai, 603110, Tamilnadu, India

    P. Rajesh

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  1. Senthilkumar Chandran
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Chandran, S., John James, G. & Rajesh, P. Optical, dielectric, laser damage threshold, dielectric and chemical etching properties of Co2+-doped sodium acid phthalate hemihydrate single crystal. J Mater Sci: Mater Electron 32, 20362–20373 (2021). https://doi.org/10.1007/s10854-021-06546-6

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