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Influence of thiourea on electroless Ni–P films deposited on silicon substrates

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Abstract

Electroless nickel–phosphorus films were produced on silicon substrates in alkaline bath solutions, with the addition of thiourea in a concentration range of 1.0–5.0 mg L−1. The influence of thiourea on the chemical composition, morphology and corrosion resistance of the films was studied. The results revealed thiourea had a major influence on plating rate, phosphorus-content and aggregate size. The optimal content of thiourea was 1 mg L−1. Thiourea accelerated the deposition rate at low concentration of 1 mg L−1, but deceased the deposition rate and the phosphorus content at high concentration. The surface of the film without thiourea was smooth and dense. Also, with increasing thiourea content, the surface evolved into coarse nodular morphology with clear intercolonial boundaries. With the addition of 1 mg L−1 thiourea, the film had better corrosion resistance compared to film without thiourea.

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Acknowledgements

This research was partly supported by the National Natural Science Foundation of China (Grant Nos. 61604021; 51875053), the Natural Science Foundation of Jiangsu Province (Grant No. BK20150260) and the Funding of Changzhou high technology research key laboratory of mould advanced manufacturing (Grant No. CM20173001).

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Authors and Affiliations

  1. Electrochemistry and Corrosion Laboratory, School of Mechanical Engineering, Changzhou University, Changzhou, 213164, Jiangsu, China

    Wangping Wu, Jianwen Liu, Naiming Miao, Jinjin Jiang & Yi Zhang

  2. Department of Physics, Changshu Institute of Technology, Changshu, 215500, Jiangsu, China

    Lei Zhang

  3. Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou, 213164, Jiangsu, China

    Ningyi Yuan

  4. Jiangsu Shunfeng Photovoltaic Technology Co., Ltd, Changzhou, 213164, Jiangsu, China

    Qinqin Wang

  5. Zhenjiang Arf Special Coating Technology Co., Ltd, Zhenjiang, 212006, Jiangsu, China

    Lixin Tang

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  1. Wangping Wu
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  2. Jianwen Liu
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  3. Naiming Miao
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Contributions

WPW designed the study and supervised an MSc student, JWL, who performed most of the experiments, but did not contribute to the preparation of this article. NYY, LXT, and QQW supervised the preparation and pretreatment process of silicon wafers and discussed it. NMM guided the corrosion experiment, JJJ did this experiment. LZ conducted the SEM/EDS experiments and assisted in their data analysis. WPW, YZ, and LZ discussed the results. WPW wrote the manuscript. WPW and YZ revised the manuscript. All authors approved the submission of the final manuscript.

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Correspondence to Wangping Wu or Yi Zhang.

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Wu, W., Liu, J., Miao, N. et al. Influence of thiourea on electroless Ni–P films deposited on silicon substrates. J Mater Sci: Mater Electron 30, 7717–7724 (2019). https://doi.org/10.1007/s10854-019-01088-4

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  • DOI: https://doi.org/10.1007/s10854-019-01088-4

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