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Effects of reduced graphene oxide film on bonding interfaces between Cu microcones and 25 μm Sn/Cu bumps

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Abstract

Reduced graphene oxide (RGO) thin film was used to improve the performance of a low-temperature bonding process based on Cu microcones and Sn/Cu bumps (diameter: 25 μm), which has potential applications in high-density packaging. Under bonding conditions of a weight of 1500 g applied to each wafer for 10 min at a temperature of 120 °C, and incorporating a thin RGO layer, a compact bonding structure was obtained without interface voids. The RGO interlayer served as a barrier against interatomic diffusion of metals under zero applied pressure, and the formation of intermetallic compounds at the interface was thereby effectively reduced after bonding. Probable mechanisms for this bonding process are discussed. The investigation used standard 25 μm-diameter Sn/Cu bumps to simulate realistic industrial production.

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Acknowledgements

This work was sponsored by National Natural Science foundation of China (61376107). We thank the Instrumental Analysis Center of Shanghai Jiao Tong University for the use of the SEM equipment.

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Authors and Affiliations

  1. State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, China

    Longlong Ju, Menglong Sun, Lei Ye, Liangzhao Zhang, Anmin Hu & Ming Li

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  1. Longlong Ju
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  2. Menglong Sun
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  3. Lei Ye
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  4. Liangzhao Zhang
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  5. Anmin Hu
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Correspondence to Anmin Hu.

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Ju, L., Sun, M., Ye, L. et al. Effects of reduced graphene oxide film on bonding interfaces between Cu microcones and 25 μm Sn/Cu bumps. J Mater Sci: Mater Electron 28, 17370–17377 (2017). https://doi.org/10.1007/s10854-017-7670-3

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  • DOI: https://doi.org/10.1007/s10854-017-7670-3

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