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Effect of interfacial dissolution on electromigration failures at metals interface

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Abstract

This work investigated the effect of interfacial dissolution on electromigration failures at metal micro-joint Interface. A theoretical model is first developed to define the critical temperature, which determines the EM-induced failure (either voiding or dissolution) at the metal micro-joint interface. Using the present developed theoretical model, a critical temperature (75.19 °C) is calculated out and explains the failure modes well at the Sn/Cu micro-joint interfaces observed in the present works. EM-induced Cu consumption is the EM failure mode at the test temperature over 75.19 °C (155, 180, and 200 °C) and (2) EM-induced voids is the EM failure mode at the test temperature below 75.19 °C (40 °C).

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Acknowledgements

This work was supported in part by the program MOST104-2221-E-008 -112 -MY3, MOST 104-2221-E-008 -112 -MY3 and MOST105-3113-E-008-008-CC2.

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Authors and Affiliations

  1. Department of Chemical Engineering and Materials Engineering, National Central University, Jhung-Li, Taiwan, ROC

    E. J. Lin, Y. C. Hsu, Y. C. Chuang & C. Y. Liu

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  1. E. J. Lin
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  2. Y. C. Hsu
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  3. Y. C. Chuang
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  4. C. Y. Liu
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Correspondence to C. Y. Liu.

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Lin, E.J., Hsu, Y.C., Chuang, Y.C. et al. Effect of interfacial dissolution on electromigration failures at metals interface. J Mater Sci: Mater Electron 28, 15149–15153 (2017). https://doi.org/10.1007/s10854-017-7391-7

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  • DOI: https://doi.org/10.1007/s10854-017-7391-7

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