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Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc

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Abstract

In this research, a tin doped gallium arsenide thin film was grown on a glass substrate by means of the TVA technique in a very short period of time (70 s) and it’s morphological, compositional, and optical properties were examined. The deposited GaAs:Sn structures were characterized via both atomic force microscope (AFM) and field emission scanning electron microscope (FESEM). In this context, current research aims to reach a conclusion about the structure of the produced GaAs:Sn film by combining AFM, FESEM and energy dispersive X-ray spectroscopy data. From the optical investigation, the refractive index and extinction coefficient values for the produced film were obtained as 3.68 and 0.03 at the wavelength of 632.8 nm, respectively. The direct optical band gap energy of the deposited thin film was determined by two different models. Estimated optical band gap values were compared with each other. The results showed that TVA technique is suitable for a GaAs:Sn coating on glass substrate.

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Acknowledgments

The authors would like to thank Emrah Dolgunsöz from Bayburt University for improving the use of English in the manuscript.

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Authors and Affiliations

  1. Physics Department, Eskişehir Osmangazi University, 26480, Eskisehir, Turkey

    Soner Özen, Volkan Şenay, Suat Pat & Şadan Korkmaz

  2. Primary Science Education Department, Bayburt University, 69000, Bayburt, Turkey

    Volkan Şenay

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  1. Soner Özen
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  2. Volkan Şenay
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Correspondence to Soner Özen.

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Özen, S., Şenay, V., Pat, S. et al. Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc. J Mater Sci: Mater Electron 26, 8983–8987 (2015). https://doi.org/10.1007/s10854-015-3581-3

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  • DOI: https://doi.org/10.1007/s10854-015-3581-3

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