Abstract
Few layer graphene were synthesized on different substrates by radio frequency plasma enhanced chemical vapor deposition in the absence of any catalyst under 300 °C. Raman spectral characterization verified the bonding form of the films to be mostly sp 2. The principal chemical mechanisms relevant to the growth of graphene from gaseous hydrogen and hydrocarbon species are presented. The kinetic processes during the activation and transport of the gaseous species are described. Furthermore, the effects of substrate treatment in the course of growth are analyzed. We demonstrated that the differences in growth conditions reveal different mechanisms of growth of graphene by chemical vapor deposition. Nevertheless, the overall thermodynamic and dynamics principles are identical. It is reasonable to obtain few layer graphene films by using methane alone without H2 as source gas. Moreover, graphene films of various feature and structures for different purposes can be achieved controllably by modulating the kinetic factors. Also, these graphene films can be used in many photoelectric devices such as solar cells and photodetectors.
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Acknowledgments
The sincere appreciation is first given to SHU-SOENs PV Joint Lab. Also, this work was partly supported by the Natural Science Foundation (Nos. 61274067 and 60876045) of China, Shanghai Leading Basic Research Project (No. 09JC1405900), and R&D Foundation of SHU-SOENs PV Joint Lab (No. SS-E0700601). Part measurements were supported by Analysis and Testing Center of Shanghai University.
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Chen, S., Gao, M., Zhao, L. et al. Hydrogen-free synthesis of few-layer graphene film on different substrates by plasma enhanced chemical vapor deposition. J Mater Sci: Mater Electron 26, 6961–6969 (2015). https://doi.org/10.1007/s10854-015-3315-6
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DOI: https://doi.org/10.1007/s10854-015-3315-6