Abstract
The BiFe0.86Ti0.12Zn0.02O3 (BFTZO) thin films were successfully prepared on indium tin oxide-coated glass substrates by chemical solution deposition method. Structures, dielectric and ferroelectric properties of thin films were investigated as functions of annealing temperature. All the BFTZO thin films exhibit a varying degree of (012) diffraction peak depending on the annealing temperature. The leakage currents are considerably reduced by doping Ti4+ (12 %) with a high doping content. Moreover, all the BFTZO thin films are phase-pure, and self-polarized, which makes it promising for applications in microelectromechanical system. The film annealed at 500 °C exhibits the largest dielectric constant of 540, which make it to be a promising candidate for applications of data storage.
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This work is supported by funding from the National Natural science Foundation of China (Nos. 50972049, 10979073 and 51172094) and Natural Science Foundation of Shandong Province, China (No. ZR2009FZ008).
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Qiu, C., Hu, G., Zhao, Y. et al. Enhanced ferroelectric properties of self-polarized BiFe0.86Ti0.12Zn0.02O3 thin films on tin oxide-coated glass substrates. J Mater Sci: Mater Electron 26, 6261–6265 (2015). https://doi.org/10.1007/s10854-015-3212-z
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DOI: https://doi.org/10.1007/s10854-015-3212-z