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Effects of Nb doping on microstructure and properties of Bi4Ti3−xNbxO12 thin films prepared by magnetron sputtering

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Abstract

Bi4Ti3−xNbxO12 ferroelectric thin films were fabricated on p-Si substrates by magnetron sputtering. The effects of Nb doping on microstructure and properties of Bi4Ti3−xNbxO12 films were investigated. Bi4Ti3−xNbxO12 films had the same structure as Bi4Ti3O12 with smaller and more uniform grains. The dielectric and ferroelectric properties of Bi4Ti3−xNbxO12 films were improved by Nb doping. Bi4Ti3−xNbxO12 films have better dielectric and ferroelectric properties with P r = 16.5 μC/cm2, E C < 100 kV/cm, ε r > 290, low dielectric loss (<0.9%) and clockwise C–V curves with a memory window of 0.9 V when x = 0.03–0.045, while an excessive Nb doping would lead to bad dielectric and ferroelectric properties.

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Acknowledgments

This work was supported by the Key Project of Chinese Ministry of Education (No. 208109), Science Foundation of Guangxi Zhuang Autonomous Region (No. 0832247) and Guangxi Specific Project Construction of Infrastructure Platform for Science and Technology (No.10-046-13).

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Authors and Affiliations

  1. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin, 541004, China

    Hua Wang, Xiaodan Huang, Jiwen Xu, Ling Yang & Shangju Zhou

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  1. Hua Wang
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  2. Xiaodan Huang
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  3. Jiwen Xu
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  4. Ling Yang
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  5. Shangju Zhou
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Correspondence to Hua Wang.

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Wang, H., Huang, X., Xu, J. et al. Effects of Nb doping on microstructure and properties of Bi4Ti3−xNbxO12 thin films prepared by magnetron sputtering. J Mater Sci: Mater Electron 23, 234–237 (2012). https://doi.org/10.1007/s10854-011-0392-z

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  • DOI: https://doi.org/10.1007/s10854-011-0392-z

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