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Effects of high temperature post-annealing on the properties of solution-based metal-induced crystallized polycrystalline silicon films

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Abstract

Solution-based metal-induced crystallized (S-MIC) poly silicon (poly-Si) thin films with different domain sizes were post-annealed at 600, 700, 800, and 900 °C for 2 h each in this order. Such annealing has increased the Hall mobility of the boron doped (p-type) and phosphorous doped (n-type) S-MIC poly-Si films at a rate of ∼0.03 cm2/V s/°C and >0.07 cm2/V s/°C, respectively. However, the carrier concentration in n-type S-MIC poly-Si decreased after each further post annealing treatment. We believe it is due to the residual nickels in poly-Si, which might induce additional dopant segregation besides the effect of grain boundaries. The performance of p-type S-MIC poly-Si TFT was greatly enhanced by post furnace annealing.

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Acknowledgments

This paper is partly supported by Key Project of NSFC (No. 60437030), “863” Project of National Ministry of Science and Technology (No. 2004AA33570), the Hong Kong Government Innovation and Technology Fund and Tianjin Natural Science Foundation (No.05YFJMJC01400).

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Authors and Affiliations

  1. Institute of Photo-electronics, Nankai University, Tianjin, 300071, P.R. China

    Chunya Wu, Zhiguo Meng, Shuyun Zhao & Shaozhen Xiong

  2. The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin, 300071, P.R. China

    Chunya Wu, Zhiguo Meng, Shuyun Zhao & Shaozhen Xiong

  3. Key Laboratory of Opto-electronic Information Science and Technology, (Nankai University and Tianjin University), Ministry of Education, Tianjin, 300071, P.R. China

    Chunya Wu, Zhiguo Meng, Shuyun Zhao & Shaozhen Xiong

  4. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P.R. China

    Chunya Wu, Zhiguo Meng, Shuyun Zhao, Man Wong & Hoi Sing Kwok

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  1. Chunya Wu
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  2. Zhiguo Meng
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  3. Shuyun Zhao
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  4. Shaozhen Xiong
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  5. Man Wong
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  6. Hoi Sing Kwok
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Correspondence to Shaozhen Xiong.

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Wu, C., Meng, Z., Zhao, S. et al. Effects of high temperature post-annealing on the properties of solution-based metal-induced crystallized polycrystalline silicon films. J Mater Sci: Mater Electron 18 (Suppl 1), 355–358 (2007). https://doi.org/10.1007/s10854-007-9245-1

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  • DOI: https://doi.org/10.1007/s10854-007-9245-1

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