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The study of forming gas plasma on HSG-7000 silsesquioxane-based low-k dielectric film using X-ray photoelectron spectroscopy

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Abstract

HSG-7000 is a spin-on glass (SOG) low k dielectric material, manufactured by Hitachi Chemical and is silesquioxane (SSQ) based. The dielectric constant (k) of HSG-7000 is claimed to be 2.2. Cu diffusion through nanoporous structure of SSQ based material in Cu/Low k interconnects has been reported as a concern. Approaches to minimize Cu diffusion involve the implementation of a barrier layer between Cu and the low k dielectric material, or surface densification via plasma treatment. This paper discusses the effects of forming gas (93% N2 + 7% H2) plasma in an attempt to reduce Cu diffusion through the HSG-7000 film without significant increase in the dielectric constant (k). The FTIR and XPS results suggest a formation of C–N bonds due to the plasma treatment. The depth profile measurement of Cu using XPS confirms the reduction of Cu diffusion through the film with plasma treatment. Results show that plasma treatment of 30–40 s on HSG-7000 will provide a reasonable Cu diffusion resistance while ensuring the increase in k is below 2.4.

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References

  1. Z. Chen, K. Prasad, C.Y. Li, S.S. Su, D. Gui, P.W. Lu, X. He, S. Balakumar, Thin Solid Films 462–463, 223 (2004)

    Article  Google Scholar 

  2. P.T. Liu, T.C. Chang, Y.L. Yang, Y.F. Cheng, F.Y. Cheng, F.Y. Shih, J.K. Lee, E. Tsai, S.M. Sze, J. Appl. Phys. Part 1. 38, 6247 (1999)

    Article  CAS  Google Scholar 

  3. T.C. Chang, P.T. Liu, F.Y. Shih, S.M. Sze, Electrochem. Solid-state Lett. 2, 390 (1999)

    Article  CAS  Google Scholar 

  4. P.T. Liu , T.C. Cheng, Y.S. Mor, S.M. Sze, Jpn J. Appl. Phys. Part 1 38, 3482 (1999)

    Article  CAS  Google Scholar 

  5. H.C. Liou, J. Duel, V. Finch, Q. Hen, P. Sakthivel, R. Ruffin, Mater. Res. Soc. Symp. Proc. 612, D5.11.1 (2002)

    Google Scholar 

  6. C.H. Chen, F.S. Huang, Thin Solid Films 441, 248–254 (2003)

    Article  CAS  Google Scholar 

  7. C.Y. Li, D.H. Zheng, SS. Su, P.W. Lu, X. He, G.J. Jia, Z. Chen, S.Y. Wu, R. Kumar, Thin Solid Films. 462–463, 172–179 (2004)

    Article  Google Scholar 

  8. Y. Uchida, T. Fukuda, H. Yanazawa, Surface and Interface Analysis 36, 677 (2004)

    Article  CAS  Google Scholar 

  9. A.M. Hoyas, J. Schuhmacher, C.M. Whelan, J.P. Celis, K. Maex, Microelectron. Eng. 76, 32 (2004)

    Article  CAS  Google Scholar 

  10. A. Rajagopal, C. Gregorie, J.J. Lemaire, J.J. Pireaux, M.R. Baklanov, S. Vanhaelemeersch, K. Maex, J.J.Waeterloos, J. Vac. Sci. Technol. B 17, 2336 (1999)

    Article  CAS  Google Scholar 

  11. T.C. Chang, P.T. Liu, Y.J. Mei, Y.S. Mor, T.H. Perng, Y.L. Yang, S.M. Sze, J. Vac. Sci. Technol. B17, 2325 (1999)

    Article  CAS  Google Scholar 

  12. K. Maex, M.R. Baklanov, D. Shamiryan, F. Lacopi, S.H. Brongersma, Z.S. Yanoyitskaya, J. Appl. Phys. 93, 8793 (2003)

    Article  CAS  Google Scholar 

  13. N. Klymko, Future Fab International 17 (2004)

  14. G. Beamson, D. Briggs, in High Resolution XPS of Organic Polymers the Scienta ESCA 300 database. (John Wiley & Sons, England, 1992)

  15. J.F. Moulder, W.F. Stickle, P.E. Sobol, K.D. Bomben, in Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corporation, USA, 1992)

  16. J.H. Boo, M.J. Jung, H.K. Park, K.H. Nam, J.G. Han Sci. Direct 188–189, 721 (2004)

    Google Scholar 

  17. International Technology Roadmap for Semiconductor (2004)

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Acknowledgements

The authors would like to thank M. Nieuwoudt of Chemistry department for FTIR work, Dr. B. James for XPS work and Mr. Shotaro Kato of Hitachi Chemicals for providing the HSG 7000.

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Authors and Affiliations

  1. Mechanical Engineering, The University of Auckland, Auckland, New Zealand

    K. C. Aw

  2. Chemical and Materials Engineering, The University of Auckland, Auckland, New Zealand

    N. T. Salim, W. Gao & Z. Li

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  1. K. C. Aw
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  2. N. T. Salim
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  3. W. Gao
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  4. Z. Li
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Correspondence to K. C. Aw.

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Aw, K.C., Salim, N.T., Gao, W. et al. The study of forming gas plasma on HSG-7000 silsesquioxane-based low-k dielectric film using X-ray photoelectron spectroscopy. J Mater Sci: Mater Electron 17, 607–614 (2006). https://doi.org/10.1007/s10854-006-0006-3

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  • DOI: https://doi.org/10.1007/s10854-006-0006-3

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