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Electronic structure and photoconductivity properties of GaP under high pressure

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Abstract

As a typical representative of Ga-based III-V compound semiconductor material, the pressure-induced structural phase transition of gallium phosphide (GaP) has received more attention, while the present work explains the electronic structure and photoconductivity properties under high pressure, especially. The paper focuses on the high-pressure electronic structure and photoconductivity properties up to 50.0 GPa in GaP, along with the ZB (zinc-blende structure) to RS (rock salt structure) phase structural transition using enthalpy calculation. The discontinuous thermal expansion coefficient and unit cell volume collapse by 15.0–15.5% are observed at around 39.2 GPa due to reversible structural phase transition under compression and decompression conditions, which is also reflected in the measured discontinuous Hall coefficient and conductivity at approximately 39.0 GPa. The computed semiconductor-to-metal transition is determined to occur at 24.5 GPa by band-gap closure in good agreement with the experimentally determined transition pressure. The light illumination provides a potential way to reduce conductivity without effect on pressure of phase transition.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11804249, 61804107), and the Natural Science Foundation of Tianjin City (Grant Nos. 18JCQNJC03700, 18JCYBJC85400, 20JCQNJC00180).

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Authors and Affiliations

  1. Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronic and Information Engineering, Tiangong University, Tianjin, 300387, China

    Yuqiang Li, Yuhong Li, Jingjing Wang, Yang Liu, Jianxin Zhang & Hongwei Liu

  2. Key Laboratory of Smart Grid of Ministry of Education, School of Electrical and Information Engineering, Tianjin University, Tianjin, 300072, China

    Qiang Zhang

  3. Tianjin San’an Optoelectronics Co., LTD, Tianjin, 300384, China

    Xiaofeng Liu

  4. Engineering Research Center of High Power Solid State Lighting Application System of Ministry of Education, Tiangong University, Tianjin, 300387, China

    Yuqiang Li, Yuhong Li, Pingfan Ning, Jingjing Wang, Yang Liu, Jianxin Zhang & Hongwei Liu

  5. School of Physical Science and Technology, Tiangong University, Tianjin, 300387, China

    Ningru Xiao

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  1. Yuqiang Li
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Li, Y., Li, Y., Zhang, Q. et al. Electronic structure and photoconductivity properties of GaP under high pressure. J Mater Sci 58, 3657–3669 (2023). https://doi.org/10.1007/s10853-023-08254-4

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