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Structural characterization and transistor properties of thickness-controllable MoS2 thin films

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Abstract

We report an optimized multi-step chemical vapor deposition process for growing MoS2 thin films. This process enables large-area processing, film patterning simply by using shadow masks, and precise control of the final thickness by changing the initial thickness of the first step of MoO3 film deposition. The structural characterization of the MoS2 films is performed with transmission electron microscopy and X-ray diffraction as a function of film thickness. MoS2 film with a thickness of 3 nm possesses a highly crystalline structure with a spacing of 0.62 nm. The crystallinity and orientation of the films are degraded with increased film thickness. Careful analysis by time-of-flight secondary ion mass spectroscopy reveals that a film with a thickness of 9 nm is not completely sulfurized, and unreacted MoO3 is left at the bottom of the film. These fundamental analyses coincide with the thickness dependence of thin-film transistor (TFT) performance. A TFT with the optimal film thickness of 3 nm achieves high performance, namely a carrier mobility of 0.57 cm2 V−1 s−1 and an on/off ratio of ~ 102.

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Acknowledgements

This work was supported by the World Premier International Center (WPI) for Materials Nanoarchitectonics (MANA) of the National Institute for Materials Science (NIMS), Tsukuba, Japan. This research was also supported by the R&D Center for Green Patrol Technologies through R&D for Global Top Environmental Technologies (RE201806011) funded by the Ministry of Environment, Republic of Korea (MOE).

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Authors and Affiliations

  1. Busan Center, Korea Basic Science Institute (KBSI), Busan, 46742, Republic of Korea

    Yesul Jeong, Ji Yeong Sung, Yunju Choi, Jong Sung Jin & Jang-Hee Yoon

  2. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, 305-0044, Japan

    Yesul Jeong, Sinae Heo, Ryoma Hayakawa & Yutaka Wakayama

  3. Department of Chemistry and Biochemistry, Faculty of Engineering, Kyushu University, 1-1 Namiki, Tsukuba, 305-0044, Japan

    Sinae Heo & Yutaka Wakayama

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  1. Yesul Jeong
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Jeong, Y., Sung, J.Y., Choi, Y. et al. Structural characterization and transistor properties of thickness-controllable MoS2 thin films. J Mater Sci 54, 7758–7767 (2019). https://doi.org/10.1007/s10853-019-03435-6

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