Abstract
We studied the annealing effect on the structural, optical, and electrical properties of sputtered CuAlO2 films. It is found that the crystallinity of CuAlO2 films is improved with increasing the annealing temperature in N2 ambient, and the film annealed at 900 °C presents the excellent preferred (001) orientation in X-ray diffraction patterns as well as Raman scattering signals, A1g and Eg. The optical absorption edge of the annealed films is observed extremely complex. Four optical bandgaps estimated are distributed in the following energy regions: ~3.00, ~3.15, ~3.50, and ~3.75 eV, which might originate from different direct transitions in CuAlO2 energy band, respectively. For the annealed CuAlO2 films, the resistivity decreases three orders of magnitude, which is attributed to the contribution of intrinsic defects, Cu vacancy and interstitial oxygen.
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Kawazoe H, Yasukawa M, Hyodo H, Kurita M, Yanagi H, Hosono H (1997) Nature 389:939
Yanagi H, Inoue S, Ueda K, Kawazoe H, Hosono H, Hamada N (2000) J Appl Phys 88:4159
Gong H, Wang Y, Luo Y (2000) Appl Phys Lett 76:3959
Banerjee AN, Chattopadhyay KK (2005) J Appl Phys 97:084308
Ong CH, Gong H (2003) Thin Solid Films 445:299
Banerjee AN, Kundoo S, Chattopadhyay KK (2003) Thin Solid Films 440:5
Tonooka K, Shimokawa K, Nishimura O (2002) Thin Solid Films 411:129
Bouzidi C, Bouzouita H, Timoumi A, Rezig B (2005) Mater Sci Eng B 118:259
Lan W, Zhang M, Dong GB, Dong PM, Wang YY, Yan H (2007) Mater Sci Eng B 139:155
Ishiguro T, Ishizawa N, Mizutani N, Kato M, Tanaka K, Marumo F (1983) Acta Crystallogr, B: Struct Sci 39:564. Calculated from ICSD using POWD-12 ++, (1997)
Lambert JC, Eysel W (1980) Mineralogical-Petrograph. Institute, Universitat Heidelberg, ICDD Grant-in-Aid, Germany
Tunell G, Posnjak E, Ksanda CJ, Kristallogr Z (1935) Kristallgeom Kristallphys Kristallchem 90:120. Calculated from ICSD using POWD-12 ++, (1997)
Pellicer-Porres J, Martínez-García D, Segura A, Rodríguez-Hernández P, Muñoz A, Chervin JC, Garro N, Kim D (2006) Phys Rev B 74:184301
Ingram BJ, Mason TO, Asahi R, Park KT, Freeman AJ (2001) Phys Rev B 64:155114
Nie X, Wei SH, Zhang SB (2002) Phys Rev Lett 88:066405
Jayalakshmi V, Murugan R, Palanivel B (2005) J Alloys Compd 388:19
Pellicer-Porres J, Segura A, Gilliland AS, Muñoz A, Rodríguez-Hernández P, Kim D, Lee MS, Kim TY (2006) Appl Phys Lett 88:181904
Benko FA, Koffyberg FP (1984) J Phys Chem Solids 45:57
Kawazoe H, Yanagi H, Ueda K, Hosono H (2000) Mater Res Bull 8:28
Cai JL, Gong H (2005) J Appl Phys 98:033707
Yu RS, Liang SC, Lu CJ, Tasi DC, Shieu FS (2007) Appl Phys Lett 90:191117
Zhang SB, Wei SH, Zunger A (2001) Phys Rev B 63:075205
Banerjee AN, Maity R, Ghosh PK, Chattopadhyay KK (2005) Thin Solid Films 474:261
Katayama-Yoshida H, Koyanagi T, Funashima H, Harima H, Yanase A (2003) Solid State Commun 126:135
Katayama-Yoshida H, Sato K, Kizaki H, Funashima H, Hamada I, Fukushima T, Dinh VA, Toyoda M (2007) Appl Phys A 89:19
Acknowledgements
The authors would like to acknowledge the financial support by the National Natural Science Foundation of China (No. 50802037), the Excellent Persons in Science and Engineering of Beijing (20061D0501500199), and the Youth Teacher Sustentation Plan of School of Physical Science and Technology of Lanzhou University (No. WL200705).
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Lan, W., Cao, W.L., Zhang, M. et al. Annealing effect on the structural, optical, and electrical properties of CuAlO2 films deposited by magnetron sputtering. J Mater Sci 44, 1594–1599 (2009). https://doi.org/10.1007/s10853-008-3229-2
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DOI: https://doi.org/10.1007/s10853-008-3229-2