Abstract
Pentacene thin film transistors fabricated without photolithographic patterning were fabricated on the plastic substrates. Both the organic/inorganic thin films and metallic electrode were patterned by shifting the position of the shadow-mask which accompanies the substrate throughout the deposition process. By using an optically transparent zirconium oxide (ZrO2) as a gate insulator and octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayer (SAM) to increase the adhesion between the plastic substrate and gate insulator and the mobility with surface treatment, high-performance transistor with field effect mobility 0.66 cm2/V s and I on/I off > 105 was formed on the plastic substrate. This technique will be applicable to all structure deposited at low temperature and suitable for an easy process for flexible display.
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Acknowledgment
This work was supported by grant No. 2M18850 from the project of NANO TECHNOLOGY RESEARCH ASSOCIATION.
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An erratum to this article is available at https://doi.org/10.1007/s10853-007-1573-2.
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Lee, JW., Ju, BK., Jang, J. et al. High mobility organic transistor patterned by the shadow-mask with all structure on a plastic substrate. J Mater Sci 42, 1026–1030 (2007). https://doi.org/10.1007/s10853-006-1046-z
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DOI: https://doi.org/10.1007/s10853-006-1046-z