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Effects of substrate orientation on opto-electronic properties in self-assembled InAs/GaAs quantum dots

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An Erratum to this article was published on 16 December 2014

Abstract

Electronic structure and optical transition characteristics in (100), (110), and (111) oriented InAs/GaAs quantum dots (containing \({\sim }2\) million atoms) were studied using a combination of valence force-field molecular mechanics and 20-band \(sp^{3}d^{5}s^{*}\) atomistic tight-binding framework. These quantum dots are promising candidates for non-traditional applications such as spintronics, quantum cryptography and quantum computation, but suffer from the deleterious effects of various internal fields. Here, the dependence of strain and polarization fields on the substrate orientation is reported and discussed. It is found that, compared to the (100) and (110) oriented counterparts, quantum dots grown on the (111) oriented substrate exhibit a smaller splitting (non-degeneracy) in the excited \(P\) states and enhanced isotropy in the interband optical emission characteristics.

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Acknowledgments

This work was supported by U.S. National Science Foundation Grant No. 1102192. Computational resources on https://nanoHUB.org were used for part of this work.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Southern Illinois University at Carbondale, 1230 Lincoln Drive, Carbondale, IL, 62901, USA

    Vinay Chimalgi & Shaikh Ahmed

  2. Chemistry Department, Brookhaven National Laboratory, Upton, NY, 11973-5000, USA

    Neerav Kharche

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  1. Vinay Chimalgi
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  2. Neerav Kharche
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Correspondence to Shaikh Ahmed.

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Chimalgi, V., Kharche, N. & Ahmed, S. Effects of substrate orientation on opto-electronic properties in self-assembled InAs/GaAs quantum dots. J Comput Electron 13, 1026–1032 (2014). https://doi.org/10.1007/s10825-014-0626-4

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  • DOI: https://doi.org/10.1007/s10825-014-0626-4

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