Abstract
Pressure-dependent resistivity and Hall effect measurements indicate that p-type Cd1 - x Mn x GeAs2 solid solutions with x = 0.06 and 0.18 undergo a high-pressure semiconductor-metal transition. The characteristic points of the phase transition are located, and its dynamics is analyzed in terms of the theory of mixed-phase systems.
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Translated from Neorganicheskie Materialy, Vol. 41, No. 1, 2005, pp. 11–14.
Original Russian Text Copyright © 2005 by Mollaev, Arslanov, Zalibekov, Marenkin, Novotortsev, Mikhailov, Molchanov.
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Mollaev, A.Y., Arslanov, R.K., Zalibekov, U.Z. et al. Phase transition of the new ferromagnet Cd1 - x Mn x GeAs2 at high pressures (0.9–4.7 GPa). Inorg Mater 41, 7–10 (2005). https://doi.org/10.1007/s10789-005-0057-5
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DOI: https://doi.org/10.1007/s10789-005-0057-5