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Temperature dependence of the lattice locations of boron implanted in germanium

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Abstract

The β-NMR of the probe atom 12B implanted in In-doped germanium was measured as a function of temperature. As a result, three resonances were observed: sharp and broad resonances around the Larmor frequency and a resonance split by the electric quadrupole interaction. It was found that the appearance of the resonances is similar to the case of Si host (Izumikawa et al. Hyperfine Interact. 136/137:559–605, 2001). The quadrupole coupling constant for the split resonance was deduced as ∣eqQ/h∣ = 252(3) kHz under the assumption that it has <111> axial symmetry. And furthermore, assuming that the defect atom jumps thermally between the identical defect sites, the activation energy of the jump was deduced as 0.4 ± 0.1 eV.

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References

  1. Izumikawa, T., Matsuta, K., Tanigaki, M. et al.: Behavior of boron implanted in semiconductor Si. Hyperfine Interact. 136/137, 559–605 (2001)

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  2. McDonald, R.E., McNab, T.K.: Lattice location of 12B in germanium and silicon at 300 K. Phys. Rev. B 13, 39–41 (1976)

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Authors and Affiliations

  1. Radioisotope Center, Niigata University, 1-757 Ashahimachi, Niigata, 951-8510, Japan

    T. Izumikawa

  2. Department of Physics, Niigata University, Niigata, 950-2181, Japan

    D. Shinojima, S. Takahashi, T. Ohtsubo & S. Ohya

  3. Department of Physics, Osaka University, Toyonaka, Osaka, 560-0043, Japan

    M. Mihara, K. Matsuta & M. Fukuda

  4. Department for the Application of Nuclear Technology, Fukui University of Technology, Fukui, 910-8505, Japan

    T. Minamisono

Authors
  1. T. Izumikawa
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  2. D. Shinojima
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  3. S. Takahashi
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  4. M. Mihara
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  5. K. Matsuta
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  6. M. Fukuda
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  7. T. Ohtsubo
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  8. S. Ohya
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  9. T. Minamisono
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Corresponding author

Correspondence to T. Izumikawa.

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Izumikawa, T., Shinojima, D., Takahashi, S. et al. Temperature dependence of the lattice locations of boron implanted in germanium. Hyperfine Interact 178, 79–82 (2007). https://doi.org/10.1007/s10751-008-9661-5

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  • DOI: https://doi.org/10.1007/s10751-008-9661-5

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