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Characterization of palladium-related defects in silicon

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Abstract

Using 100Pd/100Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T3/2 temperature dependence of their electric field gradients.

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Authors and Affiliations

  1. Beant College of Engineering & Technology, Gurdaspur, India

    R. Dogra

  2. Department of Nuclear Physics, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia

    A. P. Byrne

  3. Department of Physics, Faculty of Science, Australian National University, Canberra, Australia

    A. P. Byrne

  4. Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, Australia

    D. A. Brett & M. C. Ridgway

Authors
  1. R. Dogra
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  2. A. P. Byrne
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  3. D. A. Brett
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  4. M. C. Ridgway
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Correspondence to R. Dogra.

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Dogra, R., Byrne, A.P., Brett, D.A. et al. Characterization of palladium-related defects in silicon. Hyperfine Interact 177, 33–37 (2007). https://doi.org/10.1007/s10751-008-9618-8

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  • DOI: https://doi.org/10.1007/s10751-008-9618-8

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