Skip to main content
SpringerLink
Log in

Wideband high-isolation SPDT RF switch in 0.18-\(\upmu\)m SiGe BiCMOS technology

  • Published:
Analog Integrated Circuits and Signal Processing Aims and scope Submit manuscript

Abstract

A single pole double throw (SPDT) RF switch working in wide band is presented. The SPDT RF switch composed of many single pole single throw (SPST) switches changes the signal flow corresponding to control signals. It is very important to obtain low insertion loss and high power driving capability for dealing with the input signal of wide dynamic range. High isolation is also desirable for suppressing leakage of unwanted signal going through the off-state path. To achieve low insertion loss, the heterojunction bipolar transistor (HBT) along with MOSFET in SiGe BiCMOS process is employed. HBT shows inherently considerably high impedance between collector and emitter terminals when it turns off, so that RF signals leak less through the off-state path. The insertion loss of the proposed SPDT RF switch is maintained less than 2 dB over frequency range of interest. This RF switch cancels leakage signals coming out of the off-state paths, leading to isolation improvement. For leakage cancellation, transformer and common-base structure are employed. In addition, SPST switches are adopted in parallel with inductors for decreasing the phase deviation of the passing signal. Since the RF switch using MOSFET shows worse isolation as frequency increases, leakage signal cancellation is designed to work in higher frequency region for obtaining wideband operation. A high isolation is obtained over 23 dB in measurement. This RF switch operates from 1 to 8 GHz providing low insertion loss. In this design, 0.18-\(\upmu\)m SiGe BiCMOS process is used and the proposed RF switch occupies the area of 0.3 mm\(^{2}\).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11
Fig. 12
Fig. 13
Fig. 14
Fig. 15
Fig. 16

Similar content being viewed by others

References

  1. Kim, S.-C., Ko, B.-S., Baek, T.-J., Lim, B.-O., An, D., Shin, D.-H., et al. (2005). Hybrid ring coupler for W-band MMIC applications using MEMS technology. IEEE Microwave and Wireless Components Letters, 15(10), 652–654.

    Article  Google Scholar 

  2. Fan, H., Liu, J., & Wu, Y.-L. (2003). General models and a reduction design technique for FPGA switch box designs. IEEE Transactions on Computers, 52(1), 21–30.

    Article  Google Scholar 

  3. Rascher, J., Pinarello, S., Mueller, J.-E., Fischer, G., & Weigel, R. (2012). Highly linear robust RF switch with low insertion loss and high power handling capability in a 65 nm CMOS technology. In IEEE Topiacal Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 21–24).

  4. Kuo, W.-M.L., Comeau, J.P., Andrews, J.M., Cressler, J.D., & Mitchell, M.A. (2007). A Comparison of shunt and series/shunt nMOSFET single-pole double-throw switches for X-band phased array T/R modules. In IEEE Topiacal Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 249–252). IEEE SMIC: IEEE.

  5. Masuda, S., Yamada, M., Kamada, Y., Ohki, T., Makiyama, K., Okamoto, N., Imanishi, K., Kikkawa, T., & Shigematsu, H. (2012). GaN single-chip transceiver frontend MMIC for X-band applications. In IEEE MTT-S International Microwave Symposium Digest (pp. 1–3). IEEE IMS: IEEE.

  6. Cohen, E., Ruberto, M., Cohen, M., Degani, O., Ravid, S., & Ritter, D. (2012). A CMOS bidirectional 32-element phased-array transceiver at 60GHz with LTCC antenna. In IEEE Radio Frequency Integrated Circuits Symposium (pp. 439–442). IEEE RFIC: IEEE.

  7. Ma, K.-X., Mou, S.-X., & Yeo, K.-S. (2013). A miniaturized millimeter-wave standing-wave filtering switch with high \(P_{1dB}\). IEEE Transactions on Microwave Theory and Techniques, 61(4), 1505–1515.

    Article  Google Scholar 

  8. Shairi, N.A., Ahmad, B.H., & Khang, A.C.Z. (2011). Design and analysis of broadband high isolation of discrete packaged PIN diode SPDT switch for wireless data communication. In IEEE International RF and Microwave Conference (pp. 91–94). IEEE RFM: IEEE.

  9. Razavi, B. (2001). Design of analog CMOS integrated circuits. New York: McGraw-Hill.

    Google Scholar 

  10. Schmid, R. L., Ulusoy, A. C., Song, P., & Cressler, J. D. (2010). A 94 GHz, 1.4 dB insertion loss single-pole double-throw switch using reverse saturated SiGe HBTs. IEEE Journal of Solid State Circuits, 45(10), 2003–2007.

    Article  Google Scholar 

  11. Yeh, M.-C., Liu, R.-C., Tsai, Z.-M., & Wang, H. (2005). A miniature low-insertion-loss, high-power CMOS SPDT switch using floating-body technique for 2.4- and 5.8-GHz applications. In IEEE Radio Frequency integrated Circuits (pp. 451–454).

  12. Yeh, M.-C., Tsai, Z.-M., Liu, R.-C., Lin, K.-Y., Chang, Y.-T., & Wang, H. (2006). Design and analysis for a miniature CMOS SPDT switch using body-floating technique to improve power performance. IEEE Transactions on Microwave Theory and Techniques, 54(1), 31–39.

    Article  Google Scholar 

  13. Madan, A., Cressler, J.D., & Joseph, A. (2010). A high-linearity inverse-mode SiGe BiCMOS RF switch. In IEEE Bipolar/BiCMOS Circuits Technology Meeting (pp. 61–64).

  14. Campbell, C.F., & Dumka, D.C. (2010). Wideband high power GaN on SiC SPDT switch MMICs. In IEEE MTT-S International Microwave Symposium Digest (pp. 145–148).

  15. Huynh, C., & Nguyen, C. (2011). New ultra-high-isolation RF switch architecture and its use for a 10–38-GHz 0.18 \(\upmu\)m BiCMOS ultra-wideband switch. IEEE Transactions on Microwave Theory and Techniques, 59(2), 345–353.

    Article  Google Scholar 

  16. Ha, B. W., & Cho, C. S. (2014). High-isolation SPDT RF switch using inductive switching and leakage signal cancellation. Journal of Electromagnetic Engineering and Science, 14(4), 411–414.

    Article  Google Scholar 

  17. Sim, S. H., Jeon, L., & Kim, J. G. (2013). A compact X-band bi-directional phased-array T/R chipset in 0.13 \(\upmu\)m CMOS technology. IEEE Transactions on Microwave Theory and Techniques, 61(1), 562–569.

    Article  Google Scholar 

  18. Yang, J. M., Chung, Y. H., Nishimoto, M., Battung, M., Lee, W., & Kagiwada, R. (2004). Compact Ka-band bi-directional amplifier for low-cost electronic scanning array antenna. IEEE Journal of Solid State Circuits, 39(10), 1716–1719.

    Article  Google Scholar 

  19. TowerJazz. SBC18 Design Manual.

Download references

Author information

Authors and Affiliations

  1. School of Electronics and Information Engineering, Korea Aerospace University, Goyang, Gyeonggi-do, Korea

    Byeong Wan Ha, Chang Won Seo, Choon Sik Cho & Young-Jin Kim

Authors
  1. Byeong Wan Ha
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Chang Won Seo
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Choon Sik Cho
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Young-Jin Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Choon Sik Cho.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Ha, B.W., Seo, C.W., Cho, C.S. et al. Wideband high-isolation SPDT RF switch in 0.18-\(\upmu\)m SiGe BiCMOS technology. Analog Integr Circ Sig Process 87, 11–19 (2016). https://doi.org/10.1007/s10470-016-0701-9

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10470-016-0701-9

Keywords

Search

Navigation