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1.5-V CMOS exponential current generator

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Abstract

A new low-voltage CMOS exponential current generator is proposed in this work. MOS transistors in weak-inversion region and a master–slave technique for the temperature compensation were used. The circuit was fabricated with standard CMOS 0.35 μm process using a single supply voltage of 1.5 V. Experimental results validate the theoretical analysis and verify the effectiveness of the proposed structure. A 40 dB range linearly in dB controlled output current with less than 1.5 dB linearity error was achieved. The structure features ±1 and ±3 dB deviations for ±10% supply voltage and 80°C temperature variations, respectively.

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Authors and Affiliations

  1. Electronics Laboratory, Physics Department, University of Patras, 26500, Patras, Greece

    Spyridon Vlassis

  2. Electronics Laboratory, Department of Physics, Aristotle University of Thessaloniki, 54124, Thessaloniki, Greece

    Vassileios Kalenteridis & Stylianos Siskos

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  1. Vassileios Kalenteridis
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  2. Spyridon Vlassis
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  3. Stylianos Siskos
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Correspondence to Vassileios Kalenteridis.

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Kalenteridis, V., Vlassis, S. & Siskos, S. 1.5-V CMOS exponential current generator. Analog Integr Circ Sig Process 72, 333–341 (2012). https://doi.org/10.1007/s10470-012-9836-5

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  • DOI: https://doi.org/10.1007/s10470-012-9836-5

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