Abstract.
Infrared reflection spectroscopy (specular reflection, attenuated total reflection) has been applied in combination with spectroscopic ellipsometry and electron microscopy to analyze the surface structure of plasma-treated Si(100) surfaces. It is shown that plasma treatments in oxygen and fluorine or chlorine-containing gases cause the formation of a thin surface layer having thicknesses of a few nanometers. The layer was identified to consist of SiO2 for treatments in an oxygen plasma. Analyses of layers formed by treatments in a fluorine-containing plasma do not confirm the generally assumed model. Different Si-F vibration modes were identified in the surface layer caused by a SF6 plasma. They correlate, however, with SiF and SiF2 molecules. There are no indications of the existence of the generally assumed SiF4. Neither has SiOF2 been proven in layers produced by etching in a SF6/O2 plasma.
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Reiche, M., Wiegand, M. & Gösele, U. Infrared Spectroscopic Analysis of Plasma-Treated Si(100)-Surfaces. Mikrochim Acta 133, 35–43 (2000). https://doi.org/10.1007/s006040070069
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DOI: https://doi.org/10.1007/s006040070069