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Correction: Microsystem Technologies (2023) 29:1403-1416
The original version of this article unfortunately contained error in first author’s name and affiliation of authors.
In this article author’s name Neeraj was incorrectly written as Neeraj Neeraj.
The affiliation details for all the authors were incorrectly given as IGDTUW, Kashmere Gate, New Delhi, India but should read as given below
Neeraj1 • Shobha Sharma1 • Anubha Goel2 • Sonam Rewari3 • R. S. Gupta2
1 Indira Gandhi Delhi Technical University for Women, New Delhi.
2 Maharaja Agrasen Institute of Technology, New Delhi
3 Delhi Technological University, New Delhi
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The online version of the original article can be found at https://doi.org/10.1007/s00542-023-05480-3
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Neeraj, Sharma, S., Goel, A. et al. Correction: Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4 H-SiC). Microsyst Technol (2024). https://doi.org/10.1007/s00542-024-05679-y
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DOI: https://doi.org/10.1007/s00542-024-05679-y