Abstract
This study examined the role of Si3N4 and ZrO2 on the microstructural and electrical properties of Mo/n-Si Schottky diodes (SD) as single and double insulating layers between the Mo metal and Si semiconductor. Various characterization techniques and I–V measurements were used to analyze their optical, microstructural, chemical, morphological, and electrical properties at room temperature. The direct optical bandgaps of double interlayer films are higher than the single-layer films. XRD, FESEM, EDX, XPS, and AFM analysis revealed the Si3N4 and ZrO2 films formation at the interface. The electrical properties of the Mo/n-Si (MS), Mo/Si3N4/n-Si (MIS), Mo/ZrO2/n-Si (MIS) Schottky diodes (SD) are associated with the properties of the Mo/Si3N4/ZrO2/n-Si (MIIS) Schottky diode (SD). In comparison to the MS Schottky diode (SD), the MIS and MIIS SDs demonstrate outstanding rectifying capability and low reverse leakage current. The MIIS SD achieves the highest barrier height (BH) than the MISs and MS SDs, which has led to the BH being adjusted by the insulating layers. Furthermore, the BH, n, and series resistance were analyzed using TE, Cheung’s, Norde’s, and the Chattopadhyay methods were similar, indicating consistency and validity. The current transport mechanism was investigated based on the forward-bias I–V plot. Finally, the reverse bias I–V performance of MS SD is controlled by Schottky emission mechanism. The MIS and MIIS SD were controlled by a Poole–Frenkel mechanism at lower regions and Schottky emission mechanism at higher regions. Thus, the MIIS double interlayer SD is appropriate for high-performance electrical and optoelectronic device applications.
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The authors declare that the data supporting the findings of this study are available within the paper and its Supplementary Information files. Should any raw data files be needed in another format they are available from the corresponding author upon reasonable request.
Abbreviations
- TE:
-
Thermionic emission
- MS:
-
Metal-semiconductor
- MIS:
-
Metal-insulator-semiconductor
- MIM:
-
Metal-insulator-metal
- MIS:
-
Metal-insulator-semiconductor
- MIIS:
-
Metal-insulator-insulator-semiconductor
- XRD:
-
X-ray diffraction
- XPS:
-
X-ray photoelectron spectroscopy
- FESEM:
-
Field emission scanning electron microscopy
- AFM:
-
Atomic force microscopy
- EDX:
-
Energy-dispersive X-ray spectroscopy
- SBDs:
-
Schottky barrier diodes
- SD:
-
Schottky diode
- BH:
-
Barrier height
- n:
-
Ideality factor
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Acknowledgements
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C1089080).
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Manjunath, V., Reddy, B.P., Chalapathi, U. et al. Influence of single and double interlayers on the electrical and current transport mechanism of Mo/n-Si Schottky diode and its microstructural and chemical properties. Appl. Phys. A 129, 467 (2023). https://doi.org/10.1007/s00339-023-06664-4
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DOI: https://doi.org/10.1007/s00339-023-06664-4