Abstract
We fabricate CrP4 single crystal under high pressure and high temperature at 5 GPa and 1373 K. The comprehensive physical properties including electronic transport, magnetic properties, specific heat, Hall, thermal Seebeck and thermal conductivity are reported here. The resistivity shows a good metallic conductivity and T2.7 law relation in the low temperature, which indicates a weak correlation of electrons. It is interesting to note that CrP4 shows large magnetoresistance (MR) of 500% under T = 2 K and B = 9 T, and the MR does not reach saturation until 9 T. The mechanism of large MR in CrP4 is interpreted as the Fermi surface anisotropy. The Hall measurement shows that there is only one single type of carriers in CrP4 with holes. CrP4 exhibits paramagnetic behavior observed from the magnetic susceptibility measurement. Though CrP4 exhibits high electrical conductivity, unexpected low thermal conductivity is observed at low temperature, which is due to the zigzag chain of CrP6 octahedra along the c-axis. Low thermal conductivity is useful to design thermoelectric materials or devices by properly doping in CrP4.
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Acknowledgements
The authors acknowledge the support by the Major Research Plan of the National Natural Science Foundation of China (No. 92065201). W. Wu acknowledges National Key Research and Development of China (Grant Nos. 2017YFA0302901 and 2017YFA0302903), the National Natural Science Foundation of China (Grant Nos. 12134018, and 11921004), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB33010100) Y. F. G. acknowledges the start-up grant of ShanghaiTech University and the Program for Professor of Special Appointment (Shanghai Eastern Scholar). M. Xu acknowledges the Fundamental Research Funds for the Central Universities, HUST (No. 2021GCRC051)
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Wu, W., Yu, Z.H., Xu, M. et al. Large magnetoresistance and unexpected low thermal conductivity in topological semimetal CrP4 single crystal. Appl. Phys. A 128, 196 (2022). https://doi.org/10.1007/s00339-022-05313-6
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DOI: https://doi.org/10.1007/s00339-022-05313-6