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Gallium-doped zinc oxide films with diverse nanomorphologies grown via sol–gel united spin coating technique

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Abstract

Some gallium-doped zinc oxide nanofilms (GZONFs) with diverse morphologies were produced on the p-type Si (100) substrate by the sol–gel united spin coating. The thermally annealed nanofilms were characterized using different techniques to determine the influence of various Ga contents (0–5%) on their structures, morphologies, optical and electrical characteristics. The XRD patterns of the as-prepared nanofilms displayed the existence of the single-phase polycrystalline particles with varying sizes (55–36 nm). The band gap values of these GZONFs were ranged from 3.227–3.269 eV. The nanofilm produced with 1% of Ga exhibited the minimal electrical resistivity ≈ 4.6429 × 10–3 Ω cm, highest carrier density ≈ 1.37648 × 1020 cm−3 and Hall mobility ≈ 9.779 cm2/V s. It was shown that the overall properties of the proposed GZONFs can be customized by adjusting the concentration of Ga doping.

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Acknowledgements

The authors appreciate the financial assistance form the Higher Education and Scientific Research, University of Al-Qadisiyah, Faculty of Education, Physics Department of Iraq.

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Authors and Affiliations

  1. Physics Department, Faculty of Education, University of Al-Qadisiyah, Diwaniyah, 00964, Iraq

    Hayder J. Al-Asedy

  2. Roads and Transports Department, Faculty of Engineering, University of Al-Qadisiyah, Diwaniyah, 00964, Iraq

    Shuruq A. Al-khafaji

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  1. Hayder J. Al-Asedy
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Correspondence to Hayder J. Al-Asedy.

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Al-Asedy, H.J., Al-khafaji, S.A. Gallium-doped zinc oxide films with diverse nanomorphologies grown via sol–gel united spin coating technique. Appl. Phys. A 126, 701 (2020). https://doi.org/10.1007/s00339-020-03891-x

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