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Statistical and fractal analysis of nitrogen ion implanted tantalum thin films

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Abstract

Tantalum bulk has been implanted by nitrogen ions at an energy30 keV and at various doses of 1 × 1017, 3 × 1017, and 10 × 1017 ions/cm2. As a result, thin films are rough; their morphology and stochastic properties have been investigated. The monofractal analysis is done for unimplanted and implanted samples based on the statistical analysis conception. The correlation function and also the correlation length of the samples have been studied. Also, the power spectral density, the dimension of the fractal, the distribution of height, and the skewness and kurtosis (the higher-order moments) of the surface height have been investigated. The results show the deviation of height distribution from the gaussian one. The measurement of jagged and irregularity of samples have been investigated by calculating the roughness exponent and fractal dimensions. The rough samples which have been produced by ion bombardment have the self-affine fractal properties.

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Authors and Affiliations

  1. Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran

    A. H. Ramezani & Zh. Ebrahiminejad

  2. Department of Mechanical and Aeronautical Engineering, Center for Asset Integrity Management, University of Pretoria, Pretoria, South Africa

    S. Hoseinzadeh

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  1. A. H. Ramezani
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  2. S. Hoseinzadeh
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  3. Zh. Ebrahiminejad
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Ramezani, A.H., Hoseinzadeh, S. & Ebrahiminejad, Z. Statistical and fractal analysis of nitrogen ion implanted tantalum thin films. Appl. Phys. A 126, 481 (2020). https://doi.org/10.1007/s00339-020-03671-7

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