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Dependence of device behaviours on oxygen vacancies in ZnSnO thin-film transistors

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Abstract

ZnSnO thin-film transistors (TFTs) were fabricated by pulsed laser deposition in different oxygen partial pressures. It is found that the oxygen vacancy (VO) contents in ZnSnO films can be readily modified by the oxygen pressures in the growth process. The dependence of behaviors of ZnSnO films and TFTs on relative VO concentration was studied in detail. The relative VO concentration was determined by XPS spectra. The optical band-gap energies of ZnSnO films showed a negative correlation with VO concentration. The strong relation can also be identified for the electrical performances of ZnSnO TFTs. The threshold voltage, subthreshold swing, and density of interfacial trap states increased with the VO concentration in general. The field-effect mobility had a maximum value of 23.6 cm2 V−1 s−1 at oxygen pressure of 6 Pa, which is ascribed to the competitive factors of VO at different chemical states. It is expected that this work would gain a better understanding of oxygen vacancy in ZnSnO TFTs for practical applications.

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Acknowledgements

This work was supported by the National Key Research and Development Program of China under Grant No. 2017YFB0404703.

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China

    Jiaqi Zhang, Jianguo Lu, Yangdan Lu, Shilu Yue, Rongkai Lu & Zhizhen Ye

  2. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Jianguo Lu & Zhizhen Ye

  3. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, 200072, China

    Xifeng Li & Jianhua Zhang

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  1. Jiaqi Zhang
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Zhang, J., Lu, J., Lu, Y. et al. Dependence of device behaviours on oxygen vacancies in ZnSnO thin-film transistors. Appl. Phys. A 125, 362 (2019). https://doi.org/10.1007/s00339-019-2646-1

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