Abstract
Two samples of Bi1−xBax(Fe1−xTix)O3 with x = 0.1 thin films were deposited by RF sputtering method, on commercial indium tin oxide∕glass substrates, using different deposition procedures. The effects of deposition conditions on the structural, magnetic and electrical properties of the thin films are studied. X-ray diffraction, scanning electron microscopy (SEM), dielectric and magnetic characterization techniques were performed at room temperature. The results show that the two samples exhibit rhombohedral perovskite structure without the presence of undesired phases of mixed iron bismuth oxides. The SEM micrographs reveal a huge difference in grain size between the films obtained by the two distinct deposition procedure. The analysis of the reflection and transmission spectra in the UV–vis range allowed us to determine the thickness and roughness of thin films synthesized. Also, from this analysis, the optical band-gap energy increases compared with that obtained for this doped compound in volume and with pure BiFeO3.
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Acknowledgements
The authors want to thank ICTP for financial support of the Latin-American Network of Ferroelectric Materials (NET-43, currently NT-02), to LIDTRA-CINVESTAV, Unidad Querétaro, for infrastructure facilities and to research assistants from CINVESTAV Ing. José Alfredo Muñoz Salas, Ing. José Eleazar Urbina Alvarez, Ing. Carlos Ávila and Ing. M.A. Hernández-Landaverde for their technical assistance. Dr. Osmany García and Dr. J. Martín Yañez want to thank Sociedad Mexicana de Física for financial support. Dr. M.C. Rodríguez-Aranda acknowledges the financial support of Consejo Nacional de Ciencia y Tecnología (CONACyT) México, through Project CEMIESOL 22. FJFR acknowledges the support from FOINS—CONACYT Project 2016-01-2488.
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García-Zaldívar, O., Rodríguez-Aranda, M.C., Díaz-Castañón, S. et al. Influence of deposition procedure on the properties of multiferroic BiFeO3-based thin films deposited by radio frequency sputtering. Appl. Phys. A 124, 793 (2018). https://doi.org/10.1007/s00339-018-2216-y
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DOI: https://doi.org/10.1007/s00339-018-2216-y