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1 Erratum to: Appl. Phys. A (2015) 118:511–517 DOI 10.1007/s00339-014-8854-9
The original version of this article unfortunately contained a mistake. The captions to Figs. 3 and 4 were interchanged. The correct versions are given below.
Cross-sectional TEM images of all coupled samples. The average QD heights were 9, 11, 4, and 5 nm for samples Q1, Q2, T1, and T2, respectively
Normalized room-temperature (300 K) PL spectra at an excitation power of 25 mW as a function of energy
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The online version of the original article can be found at http://dx.doi.org/10.1007/s00339-014-8854-9.
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Tongbram, B., Shetty, S., Ghadi, H. et al. Erratum to: Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors. Appl. Phys. A 123, 362 (2017). https://doi.org/10.1007/s00339-017-0898-1
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DOI: https://doi.org/10.1007/s00339-017-0898-1