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High-performance photodetectors based on CVD-grown high-quality SnS2 nanosheets

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Abstract

2D layered SnS2 nanosheets have attracted significant attention owing to their excellent electronic and optoelectronic properties and thus becoming the potential candidates for versatile applications. Here, a micro-environmental controlled chemical vapor deposition technique was provided to synthesis the high-quality hexagonal SnS2 nanosheets which were characterized by field-emission scanning electron microscopy, confocal Raman system, X-ray diffraction, time-resolved photoluminescence, atomic force microscope, and transmission electron microscopy measurements in structural and optical properties. The as-fabricated photodetectors (under 365 nm at room temperature) based on SnS2 flakes exhibited a remarkable photoresponsivity of 1.1 × 103 A W−1, an excellent external quantum efficiency of 3.2 × 105%, and a fast response time of 40 ms at room temperature, which shows better performance than reported photodetectors based on other analogous 2D materials and even their monolayer counterparts. The results indicate that SnS2 nanosheets are very promising potential candidates in nanoscale electronic and optoelectronic devices.

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Acknowledgements

This project was supported in part by the National Natural Science Foundation of China (61306085) and the Project of Innovation-driven Plan in Central South University (2015CXS036). G. G. acknowledges support by the Fundamental Research Funds for the Central Universities of Central South University (Grant No. 2015zzts162). G. D. acknowledges the financial support by the China Scholarship Council (CSC) (Grant No. 201606375039).

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Authors and Affiliations

  1. Department of Applied Physics, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, China

    Yan Fu, Guangyang Gou, Xiaowu Wang & Guozhang Dai

  2. Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, China

    Guangyang Gou, Xiaowu Wang, Yang Chen, Jia Sun, Si Xiao, Han Huang, Junliang Yang & Guozhang Dai

  3. School of Physics and Electronics, Hunan University, Changsha, 410082, Hunan, China

    Qiang Wan

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  1. Yan Fu
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  2. Guangyang Gou
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Correspondence to Guozhang Dai.

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Fu, Y., Gou, G., Wang, X. et al. High-performance photodetectors based on CVD-grown high-quality SnS2 nanosheets. Appl. Phys. A 123, 299 (2017). https://doi.org/10.1007/s00339-017-0883-8

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