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Mixed proton and electron conduction in graphene oxide films: field effect in a transistor based on graphene oxide

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Abstract

GO films exhibited dual proton and electron conduction. Proton conduction showed the exponential dependence on relative humidity with the activation energy E a = 0.9 ± 0.05 eV. For the electron conductivity (220–273 K) induced by thermolysis and chemical means E a = 1.15 ± 0.05 eV. With increasing humidity, the electron conduction went down, which was associated with recombination phenomena. The GO films can be regarded as a first example of the mixed electron–proton conduction when sample conductivity can be regulated by external influence (humidity). Field effect is detected and studied in the transistor on the basis of the GO in different types of conduction.

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Article Open access 09 February 2016

Md. Sajibul Alam Bhuyan, Md. Nizam Uddin, … Sayed Shafayat Hossain

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Acknowledgments

This research work was supported by the Russian Foundation for Basic Research (Project No. 16-29-06263).

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Authors and Affiliations

  1. Institute of Problems of Chemical Physics, Russian Academy of Sciences, Academician Semenov Avenue 1, Chernogolovka, Moscow Region, Russia, 142432

    V. A. Smirnov, V. P. Vasiliev & N. N. Denisov

  2. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Academician Osip’yan St. 6, Chernogolovka, Moscow Region, Russia, 142432

    A. D. Mokrushin

  3. Faculty of Physics, Lomonosov Moscow State University, GSP-1, Leninskie Gory, Moscow, Russia, 119991

    K. N. Denisova

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  1. V. A. Smirnov
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Correspondence to N. N. Denisov.

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Smirnov, V.A., Mokrushin, A.D., Vasiliev, V.P. et al. Mixed proton and electron conduction in graphene oxide films: field effect in a transistor based on graphene oxide. Appl. Phys. A 122, 513 (2016). https://doi.org/10.1007/s00339-016-0039-2

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