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Plasma-enhanced atomic-layer-deposited MoO x emitters for silicon heterojunction solar cells

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Abstract

A method for the deposition of molybdenum oxide (\(\hbox {MoO}_{x}\)) with high growth rates at temperatures below 200 \(^{\circ }\text {C}\) based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric \(\hbox {MoO}_{x}\) films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed.

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Acknowledgments

The authors would like to thank Kerstin Jacob and Mona Wittig for wafer cleaning. J. Ziegler acknowledges Martin Bivour (Fraunhofer Institute for Solar Energy Systems) for valuable discussions. Financial support was provided by the European Commission through the FP7-ENERGY Project HERCULES (Grant Agreement No. 608498) and from the German Federal Ministry of Education and Research (BMBF) within the research college STRUKTURSOLAR.

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Authors and Affiliations

  1. µMD Group, Institute of Physics, Martin-Luther-University Halle-Wittenberg, Heinrich-Damerow-Strasse 4, 06120, Halle, Germany

    Johannes Ziegler, Thomas Schneider, Alexander N. Sprafke & Ralf B. Wehrspohn

  2. Fraunhofer Institute for Mechanics of Materials IWM Halle, Walter-Hülse-Str. 1, 06120, Halle, Germany

    Ralf B. Wehrspohn

  3. Institute for Silicon-Photovoltaics, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekuléstr. 5, 12489, Berlin, Germany

    Mathias Mews & Lars Korte

  4. Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eifeld-Strasse 12, 06120, Halle, Germany

    Kai Kaufmann

  5. Hochschule Anhalt Köthen, University of Applied Sciences, Bernburger Str. 55, 06966, Köthen, Germany

    Kai Kaufmann

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  1. Johannes Ziegler
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  2. Mathias Mews
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  4. Thomas Schneider
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  5. Alexander N. Sprafke
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  6. Lars Korte
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  7. Ralf B. Wehrspohn
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Correspondence to Johannes Ziegler.

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Ziegler, J., Mews, M., Kaufmann, K. et al. Plasma-enhanced atomic-layer-deposited MoO x emitters for silicon heterojunction solar cells. Appl. Phys. A 120, 811–816 (2015). https://doi.org/10.1007/s00339-015-9280-3

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  • DOI: https://doi.org/10.1007/s00339-015-9280-3

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