Abstract
In this study, n-ZnO/p-Si solar cells were fabricated by spraying ZnO nanoparticles (NPs) film synthesised by dissolving of high purity zinc in hydrogen peroxide H2O2 followed by thermal oxidation in air on p-type silicon substrates. The oxidation was carried out at different temperatures (200–500) °C. The crystalline structure of the ZnO NPs films was investigated by X-ray diffraction which indicated wurtzite structure films along (100) plane. The morphology of the NPs was studied by atomic force microscopy and scanning electron microscopy. The result showed an average grain size of ZnO NPs in the range of (72.7–95.8) nm and the surface roughness increasing with oxidation temperature. Three peaks located at ultraviolet, violet and green emission regions were noticed in the photoluminescence spectra of ZnO NPs. From optical studies, it was shown that the direct optical band gap is found to be in the range of (3.85–3.96) eV depended on the oxidation temperature. The synthesised ZnO films have n-type conductivity, and the mobility was in the range of (7–24) cm2 V−1 s−1. Current–voltage I–V and capacitance–voltage C–V of ZnO NPs/Si heterojunction solar cell were investigated as function of oxidation temperature. The spectral response of n-ZnO NPs/p-Si solar cell showed two peaks of response and its maximum value approaching 0.62 mA W−1 at λ = 800 nm. Solar cell oxidized at 500 °C gave open circuit voltage V OC of 375 mV, short circuit current density J SC of 25 mA cm−2, a fill factor FF of 0.72, and conversion efficiency η of 6.79 % under illumination of 100 mW cm−2.
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Ismail, R.A., Al-Jawad, S.M.H. & Hussein, N. Preparation of n-ZnO/p-Si solar cells by oxidation of zinc nanoparticles: effect of oxidation temperature on the photovoltaic properties. Appl. Phys. A 117, 1977–1984 (2014). https://doi.org/10.1007/s00339-014-8605-y
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DOI: https://doi.org/10.1007/s00339-014-8605-y