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Piezoelectric La3Ga5.3Ta0.5Al0.2O14 crystal: growth, crystal structure perfection, piezoelectric, and acoustic properties

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Abstract

A five-component crystal of lanthanum–gallium silicate group La3Ga5.3Ta0.5Al0.2O14 (LGTA) was grown by the Czochralski method. The LGTA crystal possesses unique thermal properties and substitution of Al for Ga in the unit cell leads to a substantial increase of electrical resistance at high temperatures. The unit cell parameters of LGTA were determined by powder diffraction. X-ray topography was used to study the crystal structure perfection: the growth banding normal to the growth axis were visualized. The independent piezoelectric constants d 11 and d 14 were measured by X-ray diffraction in the Bragg and Laue geometries. Excitation and propagation of surface acoustic waves were studied by the double-crystal X-ray diffraction at the BESSY II synchrotron radiation source. The analysis of the diffraction spectra of acoustically modulated crystals permitted the determination of the velocity of acoustic wave propagation and the power flow angles in different acoustic cuts of the LGTA crystal.

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References

  1. M.P. da Cunha, S.A. Fagundes, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 46, 1583 (1999)

    Article  Google Scholar 

  2. R.C. Smythe, R.C. Helmbold, G.E. Hague, K.A. Snow, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 47, 355 (2000)

    Article  Google Scholar 

  3. H. Fritze, H.L. Tuller, Appl. Phys. Lett. 78, 976 (2001)

    Article  ADS  Google Scholar 

  4. N. Naumenko, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 48, 530 (2001)

    Article  Google Scholar 

  5. D.V. Roshchupkin, D.V. Irzhak, R. Tucoulou, O.A. Buzanov, J. Appl. Phys. 94, 6692 (2003)

    Article  ADS  Google Scholar 

  6. D.V. Roshchupkin, H.D. Roshchupkina, D.V. Irzhak, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 52, 2081 (2005)

    Article  Google Scholar 

  7. D. Roshchupkin, D. Irzhak, A. Snigirev, I. Snigireva, L. Ortega, A. Sergeev, J. Appl. Phys. 110, 124902 (2011)

    ADS  Google Scholar 

  8. D.V. Roshchupkin, A.I. Erko, L. Ortega, D.V. Irzhak, Appl. Phys. A 94, 477 (2009)

    ADS  Google Scholar 

  9. S. Zhang, A. Yoshikawa, K. Kamada, E. Frantz, R. Xia, D.W. Snyder, T. Fukudo, T.R. Shrout, Solid State Commun. 148, 213 (2008)

    ADS  Google Scholar 

  10. S. Zhang, Y. Zheng, H. Kong, J. Xin, E. Frantz, T.R. Shrout, J. Appl. Phys. 105, 114107 (2009)

    ADS  Google Scholar 

  11. Chieko F, in Proceedings of Symposium on Ultrasonic Electronics, vol. 31 (2010), p 597

  12. K. Masae, N. Martin, Y. Akira, Opt. Mater. 34, 1513 (2012)

    Google Scholar 

  13. H. Takeds, M. Kumatorya, T. Shiosaki, Appl. Phys. Lett. 79, 4201 (2001)

    ADS  Google Scholar 

  14. M. Kumatorya, H. Sato, J. Nakanishi, T. Fujii, M. Kadota, Y. Sakabe, J. Crystal Growth 229, 289 (2001)

    ADS  Google Scholar 

  15. R. Tucoulou, R. Pascal, M. Brunel, O. Mathon, D.V. Roshchupkin, I.A. Schelokov, E. Cattan, D. Remiens, J. Appl. Crystallogr. 33, 1019 (2000)

    Google Scholar 

  16. R. Tucoulou, F. de Bergevin, O. Mathon, D. Roshchupkin, Phys. Rev. B 64, 134108 (2001)

    ADS  Google Scholar 

  17. W. Sauer, T.H. Metzger, A.G.C. Haubrich, S. Manus, A. Wixforth, J. Peisl, A. Mazuelasw, J. Härtwig, J. Baruchel, Appl. Phys. Lett. 75, 1709 (1999)

    ADS  Google Scholar 

Download references

Acknowledgments

This work has been supported by the Ministry of Education and Sciences of Russian Federation (grant # 16.513.12.3027).

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, 142432, Chernogolovka, Moscow District, Russia

    Dmitry Roshchupkin, Olga Plotitcyna, Dmitry Irzhak, Evgenii Emelin & Rashid Fahrtdinov

  2. Laboratoire de Physique des Solides, Univ. Paris-Sud, CNRS, UMR 8502, 91405, Orsay Cedex, France

    Luc Ortega

  3. FOMOS Materials Co., 105023, Buzheninova St. 16, Moscow, Russia

    Vladimir Alenkov & Oleg Buzanov

Authors
  1. Dmitry Roshchupkin
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  2. Luc Ortega
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  3. Olga Plotitcyna
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  4. Dmitry Irzhak
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  5. Evgenii Emelin
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  6. Rashid Fahrtdinov
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  7. Vladimir Alenkov
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  8. Oleg Buzanov
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Correspondence to Dmitry Roshchupkin.

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Roshchupkin, D., Ortega, L., Plotitcyna, O. et al. Piezoelectric La3Ga5.3Ta0.5Al0.2O14 crystal: growth, crystal structure perfection, piezoelectric, and acoustic properties. Appl. Phys. A 116, 1477–1488 (2014). https://doi.org/10.1007/s00339-014-8267-9

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