Abstract
We investigated the resistive switching behaviors of the metal–copper oxide–metal devices with the enhanced capability in terms of high speed and multi-bit operation. From the analysis of the normal and extended resistive switching behaviors, the voltage-induced resistive changes were modeled and the resistive switching polarity was explained. Also, we proposed and fabricated a dual vacancy-type device structure with an extended resistive switching behavior and demonstrated a high-speed implemental 2-bit multi-bit operation by controlling specifically switch-on voltage pulses.
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References
G.I. Meijer, Science 319, 1625 (2008)
M.J. Rozenberg, I.H. Inoue, M.J. Sánchez, Phys. Rev. Lett. 92, 178302 (2004)
W.R. Hiatt, T.W. Hickmott, Appl. Phys. Lett. 6, 106 (1965)
T.W. Hickmott, J. Appl. Phys. 36, 1885 (1965)
R. Waser (ed.), Nanoelectronics and Information Technology (Wiley–VCH, Weinheim, 2003)
S.S. Sheu, K.H. Cheng, M.F. Chang, P.C. Chiang, W.P. Lin, H.Y. Lee, P.S. Chen, Y.S. Chen, T.Y. Wu, F.T. Chen, K.L. Su, M.J. Kao, M.J. Tsai, IEEE Des. Test Comput. 28, 64 (2011)
S.J. Choi, G.B. Kim, K. Lee, K.H. Kim, W.Y. Yang, S. Cho, H.J. Bae, D.S. Seo, S.I. Kim, J. Lee K, Appl. Phys. A 102, 1019 (2011)
M. Janousch, G.I. Meijer, U. Staub, B. Delley, S.F. Karg, B.P. Andreasson, Adv. Mater. 19, 2232 (2007)
K. Szot, W. Sprier, G. Bihlmayer, R. Waser, Nat. Mater. 5, 312 (2006)
M.J. Lee, C.B. Lee, D. Lee, S.R. Lee, M. Chang, J.H. Hur, Y.B. Kim, C.J. Kim, D.H. Seo, S. Seo, U.I. Hung, I.K. Yoo, K.A. Kim, Nat. Mater. 10, 625 (2011)
X. Zhu, W. Su, Y. Liu, B. Hu, L. Pan, W. Lu, J. Zhang, R.W. Li, Adv. Mater. 24, 3941 (2012)
F. Nardi, S. Balatti, S. Larentis, D. Ielmini, in IEEE International Electron Devices Meeting (IEDM), Dig. Tech. Papers, p. 709 (2011)
C.B. Lee, D.S. Lee, A. Beneyard, S.R. Lee, M. Chang, M.J. Lee, J. Hur, C.J. Kim, U.I. Chung, IEEE Electron Device Lett. 32, 399 (2011)
J. Park, K.P. Biju, S. Jung, W. Lee, J. Lee, S. Kim, S. Park, J. Shin, H.S. Hwang, IEEE Electron Device Lett. 32, 476 (2011)
S.Y. Wang, C.W. Huang, D.Y. Lee, T.Y. Tseng, T.C. Chang, J. Appl. Phys. 108, 114110 (2010)
W.C. Chien, Y.C. Chen, K.P. Chang, E.K. Lai, Y.D. Yao, P. Lin, J. Gong, S.C. Tsai, S.H. Hsieh, C.F. Chen, K.Y. Hsieh, R. Liu, C.Y. Lu, in IEEE International Memory Workshop p. 1 (2009)
S.S. Sheu, M.F. Chang, K.F. Lin, C.W. Wu, Y.S. Chen, P.F. Chiu, C.C. Kuo, Y.S. Yang, P.C. Chiang, W.P. Lin, C.H. Lin, H.Y. Lee, P.Y. Gu, S.M. Wang, F.T. Chen, K.L. Su, C.H. Lien, K.H. Cheng, H.T. Wu, T.K. Ku, M.J. Kao, M.J. Tsai, in IEEE International Solid-State Circuits Conference (ISSCC), Dig. Tech. Papers, p. 200 (2011)
S.J. Choi, G.S. Park, K.H. Kim, W.Y. Yang, H.J. Bae, K.J. Lee, H.I. Lee, S.Y. Park, S. Heo, H.J. Shin, S. Lee, S. Cho, J. Appl. Phys. 110, 056106 (2011)
L.C. Olsen, R.C. Bohara, M.W. Urie, Appl. Phys. Lett. 34, 47 (1979)
F.P. Koffyberg, F.A. Benko, J. Appl. Phys. 53, 1173 (1982)
J.J. Yoo, J. Yu, J.Y. Song, Y. Yi, Carbon 49, 2659 (2011)
M.E. Grubbs, M. Deal, Y. Nishi, B.M. Clemens, IEEE Electron Device Lett. 30, 925 (2009)
K. Kwak, C. Kim, Korea-Aust. Rheol. J. 17, 35 (2005)
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Choi, SJ., Kim, KH., Yang, WY. et al. High-speed multibit operation of a dual vacancy-type oxide device with extended bi-polar resistive switching behaviors. Appl. Phys. A 112, 807–815 (2013). https://doi.org/10.1007/s00339-013-7683-6
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DOI: https://doi.org/10.1007/s00339-013-7683-6