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Influence of electric field annealing on atom diffusion in Cu/Ta/Si stacks

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Abstract

In this letter, we present a quantitative analysis of the influences caused by an electric field annealing on interface atom diffusion in a Cu/Ta/Si stack at a range of temperatures 450∼650 °C. The results indicate that the external electric field has a remarkably accelerated effect on Cu atom diffusion in the Ta layer and the failure of Ta as the diffusion barrier. The preexponent D 0 and the activation energy Q for Cu atom diffusion in the Ta layer were both decreased with the application of an external electric field. The activation energy for electric field annealed stacks is 1.22 eV, which is lower than that for annealed stacks (1.58 eV). The accelerating effect is mainly attributed to the perturbation of the electric state of the defects in the interface and grain interior.

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Acknowledgements

This work was jointly supported by the PAPD, the Fundamental Research Funds for the Central Universities, the National Natural Science Foundation of China, and the State Key Program for Basic Research of China. The authors also thank Mr. Syed Junaid Ali for his valuable help in improving the manuscript.

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Authors and Affiliations

  1. Institute of Materials Engineering, National Laboratory of Solid State Microstructures and College of Engineering and Applied Sciences, Nanjing University, Jiangsu, P. R. China

    L. Wang, Z. H. Cao & X. K. Meng

  2. Key Laboratory of Advanced Welding Technology of Jiangsu Province, Jiangsu University of Science and Technology, Zhenjiang, 212003, P. R. China

    L. Wang, J. H. Xu, L. H. Yu & T. Huang

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  1. L. Wang
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  2. Z. H. Cao
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  3. J. H. Xu
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  4. L. H. Yu
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  5. T. Huang
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  6. X. K. Meng
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Correspondence to L. Wang or X. K. Meng.

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Wang, L., Cao, Z.H., Xu, J.H. et al. Influence of electric field annealing on atom diffusion in Cu/Ta/Si stacks. Appl. Phys. A 114, 1091–1095 (2014). https://doi.org/10.1007/s00339-013-7677-4

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  • DOI: https://doi.org/10.1007/s00339-013-7677-4

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