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L10 ordering of FePtB layers by oxidation-induced stress of capping layer

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Abstract

We have studied the L10 ordering of FePtB layers assisted by the oxidation-induced stress of a capping layer. In the thermally oxidized Si substrate/MgO/CoFeB/FePtB/Ti structure, the oxidation of the Ti capping layer during post-deposition annealing exerts an in-plane tensile stress on the FePtB layer, which promotes L10 ordering of the FePtB layer. The diffusion of boron from the FePtB layer into the Ti layer also plays a crucial role in the L10 ordering. The CoFeB/FePtB composite layers can be used for the top electrode of perpendicular magnetic tunnel junctions.

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Acknowledgements

This work is supported by the KIST institutional program (2E22732 and 2V02720), by the IT R&D program of MKE/KEIT (10043398), and by the Pioneer Research Center Program (2011-0027905) funded by the MEST and NRF.

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  1. Center for Spintronics Research, Korea Institute of Science and Technology (KIST), Seoul, 136-791, Republic of Korea

    Gyung-Min Choi, Byoung-Chul Min & Kyung-Ho Shin

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  1. Gyung-Min Choi
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  2. Byoung-Chul Min
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Correspondence to Byoung-Chul Min.

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Choi, GM., Min, BC. & Shin, KH. L10 ordering of FePtB layers by oxidation-induced stress of capping layer. Appl. Phys. A 111, 389–394 (2013). https://doi.org/10.1007/s00339-012-7512-3

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  • DOI: https://doi.org/10.1007/s00339-012-7512-3

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