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Electrical properties of microcrystalline Sc3N@C80 fullerene

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Abstract

The electrical properties of microcrystalline Sc3N@C80 fullerene with fcc structure are studied by measuring both d.c. conductivity temperature dependence and a.c. impedance. Below 450 K the Sc3N@C80 sample has an energy band gap of 1.71 eV, which does not depend on the strength of the applied electric field. But when the temperature is above 450 K, a phase transition which results in a small band gap of 1.22 eV occurs under electric field strengths larger than 1 kV/cm. We also found from Cole–Cole plots of a.c. impedance that the contact resistance at the Au/Sc3N@C80 interface is less than that at the Au/C60 interface.

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Acknowledgements

This work was partially supported by project No. 15-B01, Program of Research for the Promotion of Technological Seeds, Japan Science and Technology Agency. The work was also partially supported by Grant-in-Aid for Exploratory Research No: 23651115, Japan Society for the Promotion of Science (JSPS).

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  1. Tsuyoshi Takase

    Present address: The School of International Languages and Cultures, Baiko Gakuin University, Koyocho 1-1-1, Shimonoseki, Yamaguchi, 750-8511, Japan

  2. Masamichi Sakaino

    Present address: Department of Vehicle Production Engineering, Nissan Motor Co., Ltd., 560-2, Okatsukoku, Atsugi-city, Kanagawa, 243-0192, Japan

Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, Kitakyushu National College of Technology, 5-20-1 shii, Kokuraminami, Kitakyushu, Fukuoka, 802-0985, Japan

    Kenta Kirimoto

  2. Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka, 804-8550, Japan

    Tsuyoshi Takase, Masamichi Sakaino & Yong Sun

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  1. Tsuyoshi Takase
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Correspondence to Tsuyoshi Takase.

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Takase, T., Sakaino, M., Kirimoto, K. et al. Electrical properties of microcrystalline Sc3N@C80 fullerene. Appl. Phys. A 112, 927–931 (2013). https://doi.org/10.1007/s00339-012-7449-6

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  • DOI: https://doi.org/10.1007/s00339-012-7449-6

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