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Phase-change behavior in Si/Sb80Te20 nanocomposite multilayer films

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Abstract

Phase-change behavior in Si/Sb80Te20 nanocomposite multilayer films were investigated by utilizing in situ resistance measurements. It was found that the crystallization temperature increased firstly with increasing Si layer thickness within the multilayer films, and then remained almost unchanged at 170°C. The multilayer films have the merits of both good thermal stability and fast phase-change speed. An increase in crystallization temperature by around 95°C was observed for the multilayer films when the Sb80Te20 layer thickness was reduced to 3 nm. Cross-sectional transmission electron microscopy (TEM) observations revealed that Si/Sb80Te20 nanocomposite multilayer films had layered structures with clear interfaces. The reversible phase change between set and reset states was verified in phase-change random access memory (PCRAM) cell based on [Si (1 nm)/Sb80Te20 (5 nm)]17 multilayer film.

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Authors and Affiliations

  1. Functional Materials Research Laboratory, Tongji University, Shanghai, 200092, China

    Changzhou Wang, Jiwei Zhai, Fei Shang & Xi Yao

  2. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro- System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Zhitang Song

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  1. Changzhou Wang
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  2. Jiwei Zhai
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  3. Zhitang Song
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  4. Fei Shang
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Correspondence to Jiwei Zhai.

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Wang, C., Zhai, J., Song, Z. et al. Phase-change behavior in Si/Sb80Te20 nanocomposite multilayer films. Appl. Phys. A 103, 193–198 (2011). https://doi.org/10.1007/s00339-010-5989-1

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  • DOI: https://doi.org/10.1007/s00339-010-5989-1

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