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Matrix laser cleaning: a new technique for the removal of nanometer sized particles from semiconductors

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Abstract

In this paper a new laser-based technique for the removal of nanoparticles from silicon wafers, called matrix laser cleaning, is introduced. In contrast to the already existing technique dry laser cleaning damages of the substrate can be avoided. Furthermore no liquids are used, avoiding problems that occur, e.g. in steam laser cleaning and other wet cleaning techniques. We show that damage free particle removal of polystyrene particles with diameters of at least down to 50 nm is possible with a cleaning efficiency very close to 100% within a single shot experiment. Furthermore the cleaning threshold is independent of the particle size.

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Authors and Affiliations

  1. University of Konstanz, Universitaetsstrasse 10, 78457, Konstanz, Germany

    J. Graf, M. Mosbacher, J. Boneberg & P. Leiderer

  2. Data Storage Institute, Agency for Science, Technology and Research, Singapore, 117608, Singapore

    B.S. Luk’yanchuk, M.H. Hong & C.T. Chong

Authors
  1. J. Graf
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  2. B.S. Luk’yanchuk
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  3. M. Mosbacher
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  4. M.H. Hong
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  5. C.T. Chong
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  6. J. Boneberg
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  7. P. Leiderer
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Correspondence to J. Graf.

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PACS

64.70.Hz; 68.43.Vx; 81.65.Cf

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Graf, J., Luk’yanchuk, B., Mosbacher, M. et al. Matrix laser cleaning: a new technique for the removal of nanometer sized particles from semiconductors. Appl. Phys. A 88, 227–230 (2007). https://doi.org/10.1007/s00339-007-4017-6

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  • DOI: https://doi.org/10.1007/s00339-007-4017-6

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