Abstract
The dielectric constant and leakage current mechanisms for HfO2 thin films deposited on indium–tin–oxide using reactive rf sputtering deposition were examined. Indium–tin–oxide was selected as the bottom metal as it is of interest as an electrode in transparent field-effect transistor development. The dielectric constant of HfO2 films was approximately 20 and did not vary significantly with deposition conditions. Temperature-dependent leakage current measurements indicate that Schottky emission is the dominant transport mechanism in films deposited at low temperature and/or low oxygen pressure. The HfO2/indium–tin–oxide barrier height was extracted to be ∼1.1±0.2 eV. Films deposited at high temperature and/or oxygen pressure deviate from the Schottky emission model, presumably due to the formation of polycrystalline material with grain boundary conduction.
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73.61.Ng; 73.50.Lw; 77.55.+f
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Jones, M., Kwon, Y. & Norton, D. Dielectric constant and current transport for HfO2 thin films on ITO. Appl. Phys. A 81, 285–288 (2005). https://doi.org/10.1007/s00339-005-3208-2
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DOI: https://doi.org/10.1007/s00339-005-3208-2