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Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

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Abstract

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm2, 63.74 mJ/cm2, respectively.

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Authors and Affiliations

  1. Laboratory for High Density Optical Storage, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai, 201800, China

    G. Zhang, D. Gu, Q. Chen & F. Gan

  2. Photon Craft Project, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800, Shanghai, China

    G. Zhang & X. Jiang

Authors
  1. G. Zhang
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  2. D. Gu
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  3. X. Jiang
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  4. Q. Chen
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  5. F. Gan
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Correspondence to G. Zhang.

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PACS

79.20.Ds; 78.55.Qr; 78.66.Jg; 68.37.Ef; 68.37.Ps

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Zhang, G., Gu, D., Jiang, X. et al. Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations. Appl. Phys. A 80, 1039–1043 (2005). https://doi.org/10.1007/s00339-004-3072-5

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  • DOI: https://doi.org/10.1007/s00339-004-3072-5

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