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High-speed dicing of silicon wafers conducted using ultrathin blades

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Abstract

High-speed dicing tests were conducted for silicon wafers using developed ultrathin electroplated diamond blades with metal bond. Chipping and kerf widths of 1.5 and 28 μm, respectively, are achieved by the developed ultrathin diamond blades. The calculated maximum undeformed chip thickness varied from 9.6 to 25.5 nm for various high-speed dicing conditions. The variation tendency between experimental chip width induced by three diamond blades and corresponding calculated maximum undeformed chip thickness is consistent. Scanning electron microscopy showed that the microstructure of diamond dicing blades significantly affected the chip width.

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Authors and Affiliations

  1. School of Energy and Power Engineering, Dalian University of Technology, Dalian, 116024, Peoples′ Republic of China

    Hongxiu Zhou & Shuo Qiu

  2. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian, 116024, Peoples′ Republic of China

    Yanxia Huo & Nianmin Zhang

Authors
  1. Hongxiu Zhou
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  2. Shuo Qiu
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  3. Yanxia Huo
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  4. Nianmin Zhang
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Correspondence to Hongxiu Zhou.

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Zhou, H., Qiu, S., Huo, Y. et al. High-speed dicing of silicon wafers conducted using ultrathin blades. Int J Adv Manuf Technol 66, 947–953 (2013). https://doi.org/10.1007/s00170-012-4379-6

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  • DOI: https://doi.org/10.1007/s00170-012-4379-6

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