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Mixed Layer Problem and Quasineutral Limit of the Bipolar Drift-Diffusion Model with Different Mobilities

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Abstract

The quasineutral limit and the mixed layer problem of the bipolar drift-diffusion model for semiconductors with different mobilities are studied in one dimensional space in this paper. For the general smooth doping profile, the general initial data and the different mobilities of electrons and holes, the quasineutral limit is proven by the matched asymptotic expansion method of singular perturbation problem and the energy method.

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Acknowledgements

We are grateful to Dr. Weizhu Bao from the Department of Mathematics of the National University of Singapore for meaningful discussions.

Funding

This work was supported by the National Natural Science Foundation of China (Nos. 11771031, 11831003, 11901021).

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Authors and Affiliations

  1. College of Mathematics, Beijing University of Technology, Beijing, 100124, People’s Republic of China

    Chundi Liu

  2. School of Mathematics, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing, 100124, Republic of China

    Shu Wang

Authors
  1. Chundi Liu
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  2. Shu Wang
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Contributions

The authors have no relevant financial or non-financial interests to disclose. All authors contributed to the study conception and design. Material preparation and analysis were performed by Chundi Liu and Shu Wang. The first draft of the manuscript was written by Chundi Liu and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Shu Wang.

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Liu, C., Wang, S. Mixed Layer Problem and Quasineutral Limit of the Bipolar Drift-Diffusion Model with Different Mobilities. Results Math 77, 193 (2022). https://doi.org/10.1007/s00025-022-01711-7

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