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Mechanisms and kinetics of vapor-phase etching of GaAs and GaP

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Abstract

Vapor-phase etching of (111), (111), (110) GaAs and (111), (111) GaP wafer in H2 + HBr or H2 + PBr3 gas mixtures has been conducted. The results of two cases, with liquid-forming metal (gold) layers or without coatings, are compared. Etching rates as a function of temperature in the range of 600‡ to 950‡ C were measured in Arrhenius coordinates. For both materials and for different gas environments, low-, medium- and high-temperature regions are distinguished, the activation energies in the low-temperature region (below about 650‡c) being quite different for the two cases. The kinetic results are correlated with morphological changes arising from temperature variations. Some conclusions are made about the mechanisms of chemical vaporization in various temperature regions. The vaporization mechanisms have much in common with those for AII - BVI compounds.

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References

  1. C.Lin, L.Chow, and K.L.Miller, J. Electrochem. Soc.117, 407 (1970).

    Article  CAS  Google Scholar 

  2. C.Y.Lou, and G.A.Somorjai, J. Chem. Phys.55, 4554 (1971).

    Article  CAS  Google Scholar 

  3. R.Bhat, B.J.Baliga, and S.K.Chandhi, J. Electrochem. Soc.122, 1378 (1975).

    Article  CAS  Google Scholar 

  4. R.Bhat, and S.K.Chandhi, J. Electrochem. Soc.124, 1447 (1977).

    Article  CAS  Google Scholar 

  5. J.V.DiLorenzo, in: Gallium Arsenide and Related Compounds (St.Louis, 1976), Inst. of Phys. Conf. Series 33b, 1977, p. 362.

  6. E.I.Givargizov, and R.A.Babasian, J. Crystal Growth,37, 129 (1977).

    Article  CAS  Google Scholar 

  7. E.I.Givargizov, and R.A.Babasian, J. Crystal Growth,37, 140 (1977).

    Article  CAS  Google Scholar 

  8. E.I.Givargizov, Kristall und Technik,10, 473 (1975).

    Article  Google Scholar 

  9. L.Brewer, and J.S.Kane, J. Phys. Chem.59, 105 (1955).

    Article  CAS  Google Scholar 

  10. R.S.Schoonmaker, A.Buhl, and J. Lemley, J. Phys. Chem.69, 3455 (1965).

    Article  CAS  Google Scholar 

  11. R.S.Wagner, and W.C.Ellis, Trans. AIME,233, 1053 (1965).

    CAS  Google Scholar 

  12. E.I.Givargizov, in: Current Topics in Materials Sciences, Ed. E.Kaldis (North-Holland Publ. Co., Amsterdam), 1978, vol. 1, pp. 79–145.

    Google Scholar 

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Authors and Affiliations

  1. Institute of Crystallography, USSR Academy of Sciences, 117333, Moscow, USSR

    E. I. Givargizov

  2. Research Institute of Condensed Media Physics, Erevan University, Erevan, Armenian SSR, USSR

    R. A. Babasian

Authors
  1. E. I. Givargizov
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  2. R. A. Babasian
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Givargizov, E.I., Babasian, R.A. Mechanisms and kinetics of vapor-phase etching of GaAs and GaP. J. Electron. Mater. 9, 883–904 (1980). https://doi.org/10.1007/BF02822724

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  • DOI: https://doi.org/10.1007/BF02822724

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